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arXiv 1908.08073cond-mat.mes-hallcs.ET
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人工自旋冰相变记忆电阻

Artificial Spin Ice Phase-Change Memory Resistors

Francesco Caravelli, Gia-Wei Chern, Cristiano Nisoli

摘要:

我们研究了坡莫合金纳米线上的各向异性磁阻的影响,特别是电阻的性质取决于晶格的类型。我们讨论了人工自旋冰纳米线的内部自旋构型如何影响其有效电阻态,以及哪些机制可以引入电流依赖效应动态电阻态。我们讨论了自旋诱导的热相变机制,和非热畴壁自旋反转。在这两种情况下,我们观察到记忆行为让人想起忆阻器,具有I-V滞后收缩行为。

英文摘要:

We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin ice nanowires can affect their effective resistive state, and which mechanisms can introduce a current-dependent effect dynamic resistive state. We discuss a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe memory behavior reminiscent of a memristor, with an I-V hysteretic pinched behavior.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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