We investigated six heavy element bismuth-based 18-VEC half-Heusler alloys CoTiBi, CoZrBi, CoHfBi, FeVBi, FeNbBi, and FeTaBi by first principles approach, in search of better thermoelectric prospects. The motivation is driven by expected lower thermal conductivity and the recent discovery of CoZrBi-based materials. Significantly, our calculated power factor values of all the systems show an increment of $\sim$40\% in comparison to the reported \textit{p}-type CoTiSb. We propose that doping at Bi-site, on account of electronic features, will be helpful in achieving the proposed power factor values. Interestingly, the thermal conductivity of CoTiBi and CoZrBi was found to be lower and that of CoHfBi was almost parallel, in comparison to the reported CoTiSb. We also provide conservative estimates of the figure of merit, exceeding the reported CoTiSb and comparable to FeNbSb. Overall, our results suggest potential new candidates of bismuth-based ternary compounds for high thermoelectric performance.
Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.
Half-Heusler alloys such as the (Zr,Hf)NiSn intermetallic compounds are important thermoelectric materials for converting waste heat into electricity. Reduced electrical resistivity at the hot interface between the half-Heusler material and a metal contact is critical for device performance, however this has yet to be achieved in practice. Recent experimental work suggests that a coherent interface between half-Heusler and full-Heusler compounds can form due to diffusion of transition metal atoms into the vacant sublattice of the half-Heusler lattice. We study theoretically the structural and …
Improvements in the thermoelectric properties of Half-Heusler materials have been achieved by means of a micrometer-scale phase separation that increases the phonon scattering and reduces the lattice thermal conductivity. A detailed study of the p-type Half-Heusler compounds Ti(1-x)Hf(x)CoSb0.85Sn0.15 using high-resolution synchrotron powder X-ray diffraction and element mapping electron microscopy evidences the outstanding thermoelectric properties of this system. A combination of intrinsic phase separation and adjustment of the carrier concentration via Sn substitution is used to realize a r…
The discovery of Heusler alloys has revolutionized the research field of intermetallics due to the ease with which one can derive potential candidates for multifunctional applications. During recent years, many half Heusler alloys have been investigated for their thermoelectric properties. The f electron based rare earth ternary half Heusler compound DyPdBi has its f energy levels located close to the Fermi energy level. Other research efforts have emphasized that such materials have good thermoelectric capabilities. We have explored using first principles the electronic band structure of DyPd…
The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration.
Thermoelectricity is a promising avenue for harvesting energy but large-scale applications are still hampered by the lack of highly-efficient low-cost materials. Recently, Fe$_2YZ$ Heusler compounds were predicted theoretically to be interesting candidates with large thermoelectric power factor. Here, we show that under doping conditions compatible with thermoelectric applications, these materials are prone to an unexpected magnetic instability detrimental to their thermoelectric performance. We rationalize the physics at the origin of this instability, provide guidelines for avoiding it and d…
Half-metallic Heusler alloys are among the most promising materials for future applications in spintronic devices. Although most Heusler alloys are ferromagnets, ferrimagnetic or antiferromagnetic (also called fully-compensated ferrimagnetic) alloys would be more desirable for applications due to the lower external fields. Ferrimagnetism can be either found in perfect Heusler compounds or achieved through the creation of defects in ferromagnetic Heusler alloys.
Half-Heusler compounds usually exhibit relatively higher lattice thermal conductivity that is undesirable for thermoelectric applications. Here we demonstrate by first-principles calculations and Boltzmann transport theory that the BiBaK system is an exception, which has rather low thermal conductivity as evidenced by very small phonon group velocity and relaxation time. Detailed analysis indicates that the heavy Bi and Ba atoms form a cage-like structure, inside which the light K atom rattles with larger atomic displacement parameters. In combination with its good electronic transport propert…
Half-Heusler alloys (MgAgSb structure) are promising thermoelectric materials. RNiSn half-Heusler phases (R=Hf, Zr, Ti) are the most studied in view of their thermal stability. The highest dimensionless figure of merit (ZT) obtained is ~1 in the temperature range ~450-900oC, primarily achieved in nanostructured alloys. Through proper annealing, ZT~1.2 has been obtained in a previous ZT~1 n-type (Hf,Zr)NiSn phase without the nanostructure. There is an appreciable increase in the power factor, decrease in charge carrier density, and increase in carrier mobility. The findings are attributed to th…
We have performed systematic density functional calculations and evaluated thermoelectric properties, See- beck coefficient and anomalous Nernst coefficient of half-Heusler comounds CoMSb(M=Sc, Ti, V, Cr, and Mn). The carrier concentration dependence of Seebeck coefficients in nonmagnetic compounds are in good agreement with experimental values. We found that the half-metallic ferromagnetic CoMnSb show large anomalous Nernst effect originating from Berry curvature at the Brillouin zone boundary. These results help to understanding for the mechanism of large anomalous Nernst coefficient and giv…
In order to improve the thermoelectric performance of TiCoSb we have substituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Se equally at Sb site. The electronic structure of Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 is investigated using the full potential linearized augmented plane wave method and the thermoelectric transport properties are calculated on the basis of semi-classical Boltzmann transport theory. Our band structure calculations show that Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 has semiconducting behavior with indirect band gap value of 0.98 eV which follow the empirical rule of 18…
Intermetallic semiconductors with the cubic Half-Heusler structure (XYZ) have excellent thermoelectric properties. This has been attributed to the high degeneracy of the carrier pockets in the band structure, but large differences are found between different material compositions. Half-Heuslers are often interpreted within Zintl chemistry, making a clear distinction between an electropositive cation ($X^{n+}$) and an extended polyanion ($YZ^{n-}$). Based on quantitative real space chemical bonding analysis, we unravel large degrees of covalent bonding between the formal cation and anion, makin…
Half-Heusler phases have gained recently much interest as thermoelectric materials. Screening of possible systems was performed by ab-initio simulation using VASP-software. The energy-versus-Volume (E(V)) curves were calculated and calibrated. For TiCoSb, NbNiSn, FeMoSb the stability of Half-Heusler phase against concurrent crystal structures like TiNiSi, ZrCoAl, ZrBeSi, FeSiV, ZrNiP and Full Heusler was confirmed. However, the thermo-dynamical driving force as calculated from the difference in lattice energies is less than 0.1eV/atom. Hence, the fabrication of Half Heusler phases is a challen…
The authors developed a preparation technique of Co_2FeSi full-Heusler alloy films with the L2_1-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co_2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2_1-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the…
The magnetocaloric effect in the metamagnetic Ni43Mn37.9In12.1Co7 Heusler alloy is directly studied experimentally under the adiabatic and quasi-isothermal conditions in a magnetic field with induction of up to 14 T.
Intermetallic Heusler alloys are amongst the most attractive half-metallic systems due to the high Curie temperatures and the structural similarity to the binary semiconductors. In this review we present an overview of the basic electronic and magnetic properties of both Heusler families: the so-called half-Heusler alloys like NiMnSb and the the full-Heusler alloys like Co$_2$MnGe. \textit{Ab-initio} results suggest that both the electronic and magnetic properties in these compounds are intrinsically related to the appearance of the minority-spin gap. The total spin magnetic moment $M_t$ scale…
The electronic structure and thermoelectric properties of ZrRuTe-based Half-Heusler compounds are studied using density functional theory (DFT) and Boltzmann transport formalism. Based on rigorous computations of electron relaxation time $τ$ considering electron-phonon interactions and lattice thermal conductivity $κ_l$ considering phonon-phonon interactions, we find ZrRuTe to be an intrinsically good thermoelectric material. It has a high power factor of $\sim 2\times 10^{-3}$ W/m-K$^{2}$ and low $κ_l\sim 10$ W/m-K at 800 K. The thermoelectric figure of merit $ZT \sim 0.13$ at 800 K is higher…
In this letter, we investigate the magnetic properties, electronic structures, Slater-Pauling behaviours of some quanternary Heusler alloys with 4d and 3d transition metal elements. The energy levels of the minority-spin electronic band structures for all our calculated alloys are discussed. We have summaried 21 quanternary Heusler alloys. Our calculations indicate that the half metals ZrCoCrSi, ZrCoCrIn, ZrCoFeSi, ZrFeVAl, ZrFeVGa and NbFeCrAl have large spin-flip gaps.
Order-disorder phase transition in Ni$_{2+x}Mn_{1-x}$Ga Heusler alloys has been studied. It was found that the $L2_1 \to B2^{\prime}$ phase transition in Ni2+xMn1-xGa (x = 0.16 - 0.20) Heusler alloys is of second order and the temperature of this transition decreases with Ni excess.
X-ray emission Kα1,2 spectra of Mn in Heusler alloys Co2MnMe (Me = Al, Ga, Sb), Ni2MnIn, Cu2MnAl were studied. Shifts of Mn Kα1,2 lines relatively pure Mn in high-energy region and low-energy shifts of binding energy Mn 2p XPS is detected. X-ray emission and XPS shifts are in qualitative agreement.
We report on the high-temperature (350 K <T< 1000 K) thermoelectric properties of the ternary compounds LuNiSb (cubic) and LuNiSn (orthorhombic) and a composite material (LuNiSb)$_{0.5}$(LuNiSn)$_{0.5}$. The electrical conductivity in LuNiSn is metallic, while it is semiconducting-like in LuNiSb. The Seebeck coefficient reaches -5.5 $μ$V/K at 700 K for the former compound and 66 $μ$V/K at 607 K for the latter one. The composite sample (LuNiSb)$_{0.5}$(LuNiSn)$_{0.5}$ constructed from orthorhombic matrix with cubic inclusions combines the electrical conductivity of LuNiSn with the thermoelectri…
By using a multiscale approach based on first-principles density functional theory combined with atomistic spin dynamics, we investigate the electronic structure and magnetization dynamics of an inverse Heusler and a Heusler compound and their alloys, i. e. Mn$_{2-x}Z_x$CoAl and Mn$_{2-x}Z_x$VAl, where $Z$ = Mo, W, Os and Ru, respectively. A signature of the ferrimagnetic ordering of Mn$_{2}$CoAl and Mn$_{2}$VAl Heusler alloys is reflected in the calculated Heisenberg exchange constants. They decay very rapidly with the interatomic distance and have short range, which is a consequence of the e…
A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices.
Polycrystalline Ni2.18Mn0.82Ga Heusler alloys with a coupled magnetostructural transition are studied by differential scanning calorimetry, magnetic and resistivity measurements. Coupling of the magnetic and structural subsystems results in unusual magnetic features of the alloy. These uncommon magnetic properties of Ni2.18Mn0.82Ga are attributed to the first-order structural transition from a tetragonal ferromagnetic to a cubic paramagnetic phase.
Using the fully-relativistic screened Korringa-Kohn-Rostoker method I study the orbital magnetism in the half-metallic Heusler alloys. Orbital moments are almost completely quenched and they are negligible with respect to the spin moments. The change in the atomic-resolved orbital moments can be easily explained in terms of the spin-orbit strength and hybridization effects. Finally I discuss the orbital and spin moments derived from X-ray magnetic circular dichroism experiments.
Half-Heusler phases (space group F43m, C1b) have recently captured much attention as promising thermoelectric materials for heat-to-electric power conversion in the mid-to-high temperature range. The most studied ones are the RNiSn-type half-Heusler compounds, where R represents refractory metals Hf, Zr, and Ti. These compounds have shown a high-power factor and high-power density, as well as good material stability and scalability. Due to their high thermal conductivity, however, the dimensionless figure of merit (zT) of these materials has stagnated near 1 for a long time. Since 2013, the ve…
The ferromagnetic Heusler alloy $Ni_2MnGa$ had been of major interest in the past few years because of its magnetic properties which can be easily tuned. The $Ni_2MnGa$ Heusler alloys are intermetallic alloy with $L2_1$ structure. Here we report a detailed investigation of the effect of doping of Co and Mn in Ni2MnGa. Magnetic properties and electronic structure of $Ni_{2-x}Co_xMnGa_{1-y}Mn_y$ Heusler alloys have been studied by using Green's function-based KKR-CPA method based DFT calculations. We will show the magnetization can be tuned depending on the Co and Mn occumencies. We will also di…
A half-Heusler material FeNb$_{0.8}$Ti$_{0.2}$Sb has been identified as a promising thermoelectric material due to its excellent thermoelectric performance at high temperatures. The origins of the efficient thermoelectric performance are investigated through a series of low-temperature (2 - 400 K) measurements. The high data coherence of the low and high temperatures is observed. An optimal and nearly temperature-independent carrier concentration is identified, which is ideal for the power factor. The obtained single type of hole carrier is also beneficial to the large Seebeck coefficient. The…
Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X2YZ (where X and Y are the transition metals and Z is a sp element) have the cubic structure with f…
Half-Heusler (HH) alloys have attracted considerable interest as promising thermoelectric (TE) materials in the temperature range around 700 K and above, which is close to the temperature range of most industrial waste heat sources. The past few years have seen nanostructuing play an important role in significantly enhancing the TE performance of several HH alloys. In this article, we briefly review the recent progress and advances in these HH nanocomposites. We begin by presenting the structure of HH alloys and the different strategies that have been utilized for improving the TE properties o…
We investigate electronic structures and thermoelectric properties of recent synthetic half-Heusler $\mathrm{ZrNiPb}$ by using generalized gradient approximation (GGA) and GGA plus spin-orbit coupling (GGA+SOC). Calculated results show that $\mathrm{ZrNiPb}$ is a indirect-gap semiconductor. Within the constant scattering time approximation, semi-classic transport coefficients are performed through solving Boltzmann transport equations. It is found that the SOC has more obvious influence on power factor in p-type doping than in n-type doping, leading to a detrimental effect in p-type doping. Th…
Heusler alloys containing Co and Mn are amongst the most heavily studied half-metallic ferromagnets for future applications in spintronics. Using state-of-the-art electronic structure calculations, we investigate the effect of doping and disorder on their electronic and magnetic properties. Small degrees of doping by substituting Fe or Cr for Mn scarcely affect the half-metallicity. A similar effect is also achieved by mixing the sublattices occupied by the Mn and sp atoms. Thus the half-metallicity is a robust property of these alloys.
A series of full-Heusler alloys, $\rm Fe_2V_{1-x}W_xAl$, $0 \leq x \leq 0.2$, was prepared, characterized and relevant physical properties to account for the thermoelectric performance were studied in a wide temperature range. Additionally, off-stoichiometric samples with similar compositions have been included, and a 10~\% improvement of the thermoelectric figure of merit was obtained. The V/W substitution causes i) a change of the main carrier type, from holes to electrons as evidenced from Seebeck and Hall measurements and ii) a substantial reduction of the lattice thermal conductivity due …
Utilizing a material in thermoelectric applications requires a mechanical, thermal, and lattice stability as well a high figure of merit (ZT). In this work, we present the structural, electronic, magnetic, mechanical, thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y = Ti, Cr) quaternary Heusler compounds using the density functional theory (DFT). The calculated mechanical properties and phonon dispersions reveal that the structures of these compounds are stable. Both CoFeCrGe and CoFeTiGe compounds show a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps …
Half-metallic Heusler alloys are amongst the most promising materials for future magnetoelectronic applications. We review some recent results on the electronic properties of these compounds. The origin of the gap in these half-metallic alloys and its connection to the magnetic properties are well understood. Changing the lattice parameter shifts slightly the Fermi level. Spin-orbit coupling induces states within the gap but the alloys keep a very high degree of spin-polarization at the Fermi level. Small degrees of doping and disorder as well as defects with low formation energy have little e…
Introductory chapter for the book "Halfmetallic Alloys - Fundamentals and Applications" to be published in the series Springer Lecture Notes on Physics, P. H. Dederichs and I. Galanakis (eds). It contains a review of the theoretical work on the half-metallic Heusler alloys.
Polycrystalline samples of Er$_{1-x}$Ho$_x$NiSb ($x$ = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 1) were characterized by means of x-ray powder diffraction (XRD), scanning electron microscopy (SEM), and optical metallography. The results proved the formation of half-Heusler alloys in the entire composition range. Their electrical transport properties (resistivity, thermoelectric power) were studied in the temperature interval 350-1000 K. The measured electrical resistivity spanned between 5 and 25 $μΩ$m. The maximum thermopower of 50-65 $μ$V/K was observed at temperatures 500-650 K. Replacing Ho for Er resu…
We study the temperature dependence of strain under constant magnetic-fields in Ni-Mn based ferromagnetic Heusler alloys in the form Ni-Mn-$X$ ($X$: Ga, In, Sn, Sb) which undergo a martensitic transformation. We discuss the influence of the applied magnetic-field on the nucleation of ferromagnetic martensite and extract information on the easy-axis of magnetization in the martensitic state.
The authors demonstrated that L21-ordered full-Heusler Co2FeSi (CFS) alloy film with thickness of 100 nm were formed by facing targets sputtering (FTS) method at a substrate temperature TS = 300 deg C. Degrees of L21- and B2- order for the film were 0.37, and 0.96, respectively. Furthermore, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by MgO-interface magnetic anisotropy were successfully formed by the FTS method. The CFS/MgO stacking layers showed PMA when dCFS was 0.6 nm <= dCFS <= 1.0 nm. The PMA in these structures resulted from the CFS/MgO interf…
In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificial vanadium layer is added between the substrate and the Heusler film. By means of selective wet-chemical etching the vanadium layer can be removed. Conditions for the crystallization of Vanadium layers and epitaxial growth of the Heusler films are indicated. Magnetic and structural properties of freestanding and as-prepared films are compared in detail. The main focus of this stud…
MgO-barrier magnetic tunnel junctions with half-metallic Heusler alloy electrodes attracted much attentions for spintronics applications. However, a couples of issues related to materials still remain to be resolved for practical uses. Recently, quarterly equiatomic Heusler alloys attracted attentions as advanced Heusler alloys. CoIrMnZ (Z = Al, Si, Ga, and Ge) half-metallic Heusler alloys were designed and predicted to have moderate Curie temperatures and to be a lattice-matched with the MgO barrier, being advantageous to traditional Co2 Heusler alloys [T. Roy et al., J. Magn. Magn. Mater. 49…
High lattice thermal conductivity in half-Heusler alloys has been the major bottleneck in thermoelectric applications. Disordered half-Heusler alloys could be a plausible alternative to this predicament. In this paper, utilizing first-principles simulations, we have demonstrated the low lattice thermal conductivity in two such phases, NbFe$_{0.5}$Ni$_{0.5}$Sn and TaFe$_{0.5}$Ni$_{0.5}$Sn, in comparison to well-known half-Heusler alloy TiCoSb. We trace the low thermal conductivity to their short phonon lifetime, originating from the interaction among acoustic and low-lying optical phonons. We r…
Half-Heuslers, an emerging thermoelectric material group, has complex bandstructures with multiple bands that can be aligned through band engineering approaches, giving us an opportunity to improve their power factor. In this work, going beyond the constant relaxation time approximation, we perform an investigation of the benefits of band alignment in improving the thermoelectric power factor under different density of states dependent scattering scenarios. As a test case we consider the Co-based p-type half-Heuslers TiCoSb, NbCoSn and ZrCoSb. First, using simplified effective mass models comb…
By using ab initio electronic structure calculations here we report the three new full Heusler alloys which are possessing very good thermoelectric behavior and expected to be synthesized in the laboratories. These are Fe2 ScP, Fe2 ScAs and Fe2 ScSb compound. First two compounds are indirect band gap semiconductors and the last one shows semimetallic ground state. The value of band gap of Fe2 ScP and Fe2 ScAs is 0.3 and 0.09 eV, respectively. These compounds show the presence of flat conduction bands along Γ - X-direction suggesting for the large electron like effective mass and promising for …
We report a systematic investigation on the magnetization relaxation properties of iron-based half-metallic Heusler alloy Fe$_{2}$Cr$_{1-x}$Co_${x}$Si (FCCS) thin films using broadband angular-resolved ferromagnetic resonance. Band structure engineering through Co doping (x) demonstrated by first-principles calculations is shown to tune the intrinsic magnetic damping over an order of magnitude, namely 0.01-0.0008. Notably, the intrinsic damping constants for samples with high Co concentration are among the lowest reported for Heusler alloys and even comparable to magnetic insulator yttrium iro…
Heusler alloy Co2FeAl was employed as ferromagnetic layers in Co2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm takes on strongly antiferromagnetic coupling, which maintains up to 150 oC annealing for 1 hour. The structure has a very low saturation magnetization Ms of 425 emu/cc, a low switching field Hsw of 4.3 Oe and a high saturation field Hs of 5257 Oe at room temperature, which are favorable for application in ultrahigh density magnetic read heads or other magnetic memory devices. XRD study testifies th…
Materials design based on first-principles electronic calculations has proven a fruitful strategy to identify new thermoelectric materials with a favorable figure of merit. Recent electronic structure calculations predict that in cobalt-based half-Heusler systems a power factor higher than in CoTiSb can be achieved upon p-type doping of CoVSn, CoNbSn, CoTaSn, CoMoIn, and CoWIn. Here, using a first-principles approach and semi-classical Boltzmann transport theory, we investigate the electrical and thermal transport properties of these materials. The calculated thermal conductivity at room tempe…
We study the electronic and magnetic properties of the quaternary AuMnSn$_{1-x}$Sb$_{x}$ Heusler alloys using first principles calculations. We determine their magnetic phase diagram and we show that they present a phase transition from a ferromagnetic to an antiferromagnetic state with increasing Sb concentration. For large Sb concentrations the antiferromagnetic superexchange coupling dominates over the ferromagnetic RKKY-like exchange mechanism. This behavior is similar to the one demonstrated by the isovalent Ni$_{1-x}$Cu$_x$MnSb alloy studied recently by the authors [I. Galanakis et al, P…
We have performed a comprehensive set of first principles calculations to study the structural, elastic, electronic, magnetic and transport properties of new quaternary Heusler compounds CoZrMnX (X =Al, Ga, Ge, In). The results showed that all the quaternary Heusler compounds were stable in Type(I) structure. CoZrMnX are elastically stable and relatively hard materials. CoZrMnAl, CoZrMnGa, and CoZrMnIn are found to be ductile and CoZrMnGe is brittle in nature. The calculated Debye temperatures of all compounds are relatively high. The electronic structure calculations reveal that CoZrMnAl is n…
The authors developed a new analysis approach for evaluation of atomic ordering in full-Heusler alloys, which is extension of the commonly used Webster model. Our model can give accurate physical formalism for the degree of atomic ordering in the L21 structure, including correction with respect to the fully disordered A2 structure, i.e., the model can directly evaluate the degree of L21-ordering under a lower ordering structure than the complete B2-ordering structure. The proposed model was applied to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing. The film formed at T…
The electronic band structure-controlled ultrafast demagnetization mechanism in Co2FexMn1-xSi Heusler alloy is underpinned by systematic variation of composition. We find the spin-flip scattering rate controlled by spin density of states at Fermi level is responsible for non-monotonic variation of ultrafast demagnetization time (τM) with x with a maximum at x = 0.4. Furthermore, Gilbert damping constant exhibits an inverse relationship with τM due to the dominance of inter-band scattering mechanism. This establishes a unified mechanism of ultrafast spin dynamics based on Fermi level position.
The direct control of carriers spin by electric field under room temperature is one of the most important challenges in the field of spintronics. For this purpose, we here propose a quaternary Heusler alloy FeVTiSi. Based on first principles calculations, FeVTiSi alloy is found to be an intrinsic bipolar magnetic semiconductor in which the valence band and conduction band approach the Fermi level through opposite spin channels. Thus FeVTiSi alloy can conduct completely spin-polarized currents with tunable spin-polarization direction simply by applying a gate voltage. Furthermore, by Monte Carl…
