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arXiv 1901.10883cond-mat.mtrl-sci
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三畴结构铁电氧化物薄膜功能特性的模拟

Modelling functional properties of ferroelectric oxide thin films with a three-domain structure

E. P. Houwman, K. Vergeer, G. Koster, G. Rijnders

摘要:

用解析和数值方法研究了固定在基片上的铁电(001)取向薄膜的性质。重点是四畴,多畴,铁电相,使用三畴结构,如实验所观察到的。先前使用的,非常严格的边界条件,所产生的域壁,放松,创造更多的模式的能量松弛。有人认为,这种方法给出了一个更现实的描述的钳位铁电薄膜。结果表明,对于PbZr_(1-x)Ti_xO_3},当x_Ti>0.5时,在很宽的衬底应变范围内都存在四畴多畴相,对应于体相图的四畴一侧。当x_Ti<0.5时,在体菱面体一侧出现多畴菱面体相.相温度图,和铁电,介电和压电性能,以及晶格参数,计算作为衬底诱导应变和外加电场的函数。解析公式允许分解成三个不同的原因:畴壁运动,场致弹性效应和压电效应这些属性。结果表明,在外加电场作用下,面内取向畴的畴壁运动和极化旋转对薄膜的性能贡献最大,而面外取向畴的贡献很小。

英文摘要:

The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally. The previously used, very restrictive set of boundary conditions, arising from the domain walls, is relaxed, creating more modes for energy relaxation. It is argued that this approach gives a more realistic description of the clamped ferroelectric film. It is shown that for the ferroelectric oxides PbZr_(1-x)Ti_xO_3} the tetragonal, polydomain phase is present over a wide range of substrate induced strains for x_Ti>0.5, corresponding to the tetragonal side of the bulk phase diagram. A polydomain, rhombohedral phase is present for x_Ti<0.5, at the bulk rhombohedral side. Phase-temperature diagrams, and ferroelectric, dielectric and piezoelectric properties, as well as lattice parameters, are calculated as function of substrate induced strain and applied field. The analytical formulation allows the decomposition of these properties into three different causes: domain wall motion, field induced elastic effects and piezoelectric effects. It is found that domain wall motion and polarization rotation of the in-plane oriented domains under an applied field contribute most to the properties, while the out-of-plane oriented domains hardly contribute.

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