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arXiv 1901.04800cond-mat.mtrl-sci
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共价半导体和过渡金属氧化物的DFT-1/2方法的局限性

Limitations of the DFT-1/2 method for covalent semiconductors and transition-metal oxides

Jan Doumont, Fabien Tran, Peter Blaha

摘要:

密度泛函理论中的DFT-1/2方法[L. G. Ferreira等人,Phys.Rev.B78,125116(2008)]旨在以半局部计算的计算成本提供精确的带隙。该方法已在大量情况下显示出前景,然而,最近已指出其在如何将其应用于共价半导体方面的一些限制或模糊性[K. H. Xue等人,Comput. Mater. Science 153,493(2018)]。在这项工作中,我们详细研究了DFT-1/2方法的一些问题,重点是两类材料:共价键合的半导体和过渡金属氧化物。我们认为,在应用DFT-1/2对这些材料的谨慎,并得到一个改善的带隙的条件是在价带最大值和导带最小值的轨道的空间分离。

英文摘要:

The DFT-1/2 method in density functional theory [L. G. Ferreira et al., Phys. Rev. B 78, 125116 (2008)] aims to provide accurate band gaps at the computational cost of semilocal calculations. The method has shown promise in a large number of cases, however some of its limitations or ambiguities on how to apply it to covalent semiconductors have been pointed out recently [K.-H. Xue et al., Comput. Mater. Science 153, 493 (2018)]. In this work, we investigate in detail some of the problems of the DFT-1/2 method with a focus on two classes of materials: covalently bonded semiconductors and transition-metal oxides. We argue for caution in the application of DFT-1/2 to these materials, and the condition to get an improved band gap is a spatial separation of the orbitals at the valence band maximum and conduction band minimum.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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