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arXiv 1811.04479cond-mat.mes-hall
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量子网络模型中的双结弹道开关

Two-junction ballistic switch in quantum network model

D. E. Tsurikov, A. M. Yafyasov

摘要:

寻找纳米电子器件的最佳参数是纳米电子器件建模的首要问题。我们以量子网络模型中的电子弹道开关为例解决了这个问题。为了这个目的,我们使用一个计算方案,其中考虑到封闭通道。它允许正确计算的散射矩阵的开关,因此,电流流过它。不失一般性,我们认为在室温下的双结开关模型。其特点是控制电场在分支前的畴内局部化。我们使用遗传算法优化开关参数。以InP为代价,GaAs和GaSb的开关效率达到77- 78%。对于所考虑的材料,器件的伏安特性曲线在0-50 mV的偏置电压下接近线性。它允许描述一个很好的准确度电子输运开关的$3\times 3$矩阵的近似电导率。最后,在对双结开关进行参数优化的基础上,提出了在量子网络框架下对纳米电子器件进行建模的一般方案。

英文摘要:

Searching of optimal parameters of nanoelectronic devices is a primal problem in their modeling. We solve this problem on example of the electron ballistic switch in quantum network model. For this purpose, we use a computing scheme in which closed channels are taking into account. It allows calculating correctly a scattering matrix of the switch and, consequently, the electric currents flowing through it. Without losing generality, we consider model of two-junction switch at room temperature. Its character is localization of the controlling electric field in the domain before branching. We optimize switch parameters using a genetic algorithm. At the expense of it for InP, GaAs and GaSb switch efficiency reached 77-78%. It is established that, for the considered materials, volt-ampere characteristics of the device are close to the linear ones at bias voltages 0-50 mV. It allowed describing with a good accuracy electron transport in the switch by means of $3\times 3$ matrix of approximate conductivity. Finally, based on the performed parameters optimization of two-junction switch we formulate the general scheme of modeling nanoelectronic devices in the framework of quantum network formalism.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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