arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1809.08615cond-mat.mtrl-sci
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纳米分辨率探测SiO $_2$ /Si表面和界面晶格振动

Probing lattice vibration at surface and interface of SiO$_2$/Si with nanometer resolution

Yuehui Li, Mei Wu, Ning Li, Yuanwei Sun, Chenglong Shi, Xuetao Zhu, Jiandong Guo, Dapeng Yu, Peng Gao

摘要:

单色像差校正电子显微术的最新进展使得以高能量分辨率和高空间分辨率探测晶格振动成为可能。在这里,我们使用亚10 meV的电子能量损失谱研究在Si衬底上的非晶SiO $_2$(a-SiO $_2$)薄膜的表面和界面的局部振动特性。我们发现,每个光学模式分裂成三个子模式,即,表面模式、体模式和界面模式,可以从不同的位置测量。纯表面模式可以在表面附近的真空中测量,并且纯界面模式预计将在界面位置或在Si中获得,而在SiO $_2$内部,测量的信号是体模、表面模和界面模的混合物。体模的振动能量最大,表面模的振动能量最小。表面模式的能量是厚度依赖性的,表现出蓝移的z-厚度(平行于快电子束)的$_2$膜的增加,而体和界面模式具有恒定的振动能量。体模的强度随厚度的增加而线性增加,在表面和界面附近(几纳米内)急剧下降到零。表面模在真空中遵循贝塞尔函数缓慢衰减。所观察到的空间相关的振动行为的机制进行了讨论,并定量地比较介电响应理论分析。我们的纳米尺度振动特性测量提供了有关表面和界面键合条件的有用信息,因此可以帮助通过表面和界面处理设计更好的硅基电子器件

英文摘要:

Recent advances in monochromatic aberration corrected electron microscopy make it possible to detect the lattice vibration with both high-energy resolution and high spatial resolution. Here, we use sub-10 meV electron energy loss spectroscopy to investigate the local vibrational properties at surface and interface of an amorphous SiO$_2$ (a-SiO$_2$) thin film on Si substrate. We find that each optical mode splits into three sub-modes, i.e., surface mode, bulk mode and interface mode, which can be measured from different locations. The pure surface modes can be measured in the vacuum near the surface, and the pure interface modes are expected to be obtained either at the interface location or in the Si, while inside the SiO$_2$ the measured signal is a mixture of bulk, surface, and interface modes. The bulk mode has the largest vibration energy and surface mode has the lowest. The energy of surface mode is thickness dependent, showing a blue-shift as z-thickness (parallel to fast electron beam) of SiO$_2$ film increases, while the bulk and interface modes have constant vibration energy. The intensity of bulk mode linearly increases with thickness being increased, and it drops steeply to zero near the surface and interface (within a few nanometers). The surface modes decay slowly in the vacuum following a Bessel function. The mechanism of the observed spatially dependent vibration behavior is discussed and quantitatively compared with dielectric response theory analysis. Our nanometer scale measurements of vibrations properties provide useful information about the bonding conditions at the surface and interface and thus may help to design better silicon-based electronic devices via surface and interface treatments

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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