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arXiv 1809.08010cond-mat.mtrl-sci
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用DFT研究卤素吸附对Si(100)表面Work Function的调节

Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study

Matteo Bertocchi, Michele Amato, Ivan Marri, Stefano Ossicini

摘要:

介绍并讨论了Si(100)表面不同化学末端引起的功函数调谐的第一性原理计算。我们发现,卤素原子(I,Br,Cl和F)的存在下,导致增加的功函数,如果相比,完全氢化的表面。这是一个相当普遍的效果,直接与化学吸附原子的电负性以及界面处的电荷重新分布有关。所有这些结果都与以前的理论工作和实验数据进行了检查,获得的(100)以及其他Si表面取向。基于这种分析,我们认为,由界面化学的变化所引起的电子性质的变化强烈依赖于化学吸附的物种,少得多的表面晶体取向。

英文摘要:

First-principles calculations of work function tuning induced by different chemical terminations on Si(100) surface are presented and discussed. We find that the presence of halogen atoms (I, Br, Cl, and F) leads to an increase of the work function if compared to the fully hydrogenated surface. This is a quite general effect and is directly linked to the chemisorbed atoms electronegativity as well as to the charge redistribution at the interface. All these results are examined with respect to previous theoretical works and experimental data obtained for the (100) as well as other Si surface orientations. Based on this analysis, we argue that the changes in the electronic properties caused by variations of the interfacial chemistry strongly depend on the chemisorbed species and much less on the surface crystal orientation.

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