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arXiv 1809.04346physics.ins-dethep-ex
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SiPMs的表征

Characterisation of SiPMs

Robert Klanner

摘要:

硅光电倍增器由于其优异的性能、坚固性和相对简单的使用,是当前和未来许多应用的光子探测器的选择。本文综述了SiPM的制备方法。介绍了不同的SiPM参数,并提出了确定这些参数的通用设置。最后,讨论了从测量中提取参数的方法,并给出了结果。如果一个参数可以从不同的测量中获得,则将结果进行比较并给出建议,这被认为是最可靠的。SiPMs的表征,特别是在高光强度和高辐射场中的表征,目前是一个深入研究的领域,其中将讨论许多开放的问题和难题。

英文摘要:

Silicon photomultipliers, thanks to their excellent performance, robustness and relatively simple use, are the photon-detectors of choice for many present and future applications. This paper gives an overview of methods to characterise SiPMs. The different SiPM parameters are introduced and generic setups for their determination presented. Finally, ways to extract the parameters from the measurements are discussed and the results shown. If a parameter can be obtained from different measurements, the results are compared and recommendations given, which is considered to be the most reliable. The characterisation of SiPMs, in particular for high light intensities and in high radiation fields, is presently a field of intensive research with many open questions and problems which will be discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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