商用NUV-MT硅光电倍增管的特性表征
Characterisation of Commercially Available NUV-MT Silicon Photomultipliers
AI总结：
本文对商用Broadcom AFBR-S4N系列NUV-MT SiPM在宽温宽过压范围内进行系统表征，测得多项关键性能参数，为其在粒子与天体粒子物理中的应用提供数据支持。
AI中文摘要：
基于NUV-MT技术的硅光电倍增管（SiPM）相比早期设计，具有更高的光电探测效率和更低的关联噪声，因此在粒子物理和天体粒子物理应用中愈发受到青睐。本文对商用Broadcom AFBR-S4N系列NUV-MT SiPM在宽温度范围（-85℃至23℃）和过电压范围（10-16V过电压VoV）内进行了系统特性表征，测量了击穿电压、增益、信噪比、暗计数率、后脉冲概率以及内部和外部光学串扰等关键性能参数。在12Vov和23℃条件下，测得暗噪声为107.2±2.1 kcps/mm²，与制造商规格一致；在12Vov和-30℃条件下，测得平均暗噪声为1.69±0.12 kcps/mm²、平均增益为(6.88±0.15)×10⁶、平均信噪比为13.6±0.9、平均后脉冲概率为(0.59±0.06)%、平均直接串扰概率为(26.49±0.28)%、平均延迟串扰概率为(0.72±0.10)%、平均外部串扰概率为(0.10±0.04)%。
英文摘要：
Silicon Photomultipliers (SiPMs) based on NUV-MT technology offer improved photo-detection efficiency and reduced correlated noise compared to earlier designs, making them increasingly attractive for particle and astroparticle physics applications. We present a systematic characterisation of commercially available Broadcom AFBR-S4N series NUV-MT SiPMs over a wide range of temperatures and overvoltages, from -85oC to 23oC and from 10-16V overvoltage (VoV). Key performance parameters are measured, including breakdown voltage, gain, signal-to-noise ratio, dark count rate, afterpulsing probability, and both internal and external optical crosstalk. At 12Vov and 23oC a dark noise of 107.2+/-2.1 kcps/mm^2 is measured, consistent with manufacturer specifications. At 12Vov and -30oC the measurements yielded an average dark noise of 1.69+/-0.12 kcps/mm^2, an average gain of (6.88+/-0.15)x10^6, an average signal to noise ratio of 13.6+/-0.9, an average afterpulsing probability of (0.59+/-0.06)%, an average direct crosstalk probability of (26.49+/-0.28)%, an average delayed crosstalk probability of (0.72+/-0.10)%, and an average external crosstalk probability of (0.10+/-0.04)%.
