低能Ar ~+离子束中的杂质是Si上形成斑图形成的原因
Impurity in low energy Ar+ ion beam is the cause of pattern formation on Si
摘要：
我们报告的决定性作用的活性离子杂质在低能量Ar+离子束表面纳米图案的形成。用能量为3-10 keV的纯Ar ~+和不纯Ar ~+离子束斜向照射Si表面，确定了低能（几keV到几十keV）Ar ~+离子束斑图形成实验不一致性的来源。没有明确定义的模式被观察到的质量选择纯Ar+离子轰击，而明确定义的周期性波纹图案是由相同的实验条件与不纯的质量未经分析的Ar+离子照射形成。质量未分析束中的污染物，特别是活性氮、氧和碳，通过在Si表面上引入化学不稳定性而在斑图形成中起主要作用。用原子力显微镜（AFM）观察了辐照后的硅表面形貌。用X射线光电子能谱学（XPS）研究了表面污染及相应化合物的形成。
英文摘要：
We report the decisive role of reactive ion impurities in low energy Ar+ ion beam on surface nanopattern formation. The source of experimental inconsistency in pattern formation by low energy (few keV to 10's of KeV) Ar+ ion beam has been identified by irradiating Si surface at an oblique angle with pure and impure Ar+ ion beam of energy 3-10 keV. No well-defined patterns are observed for mass selected pure Ar+ ion bombardment, whereas well defined periodic ripple pattern is formed by the same experimental condition with impure mass unanalyzed Ar+ ion irradiation. The contaminants in mass unanalyzed beam specifically reactive nitrogen, oxygen and carbon play the main role of pattern formation by introducing chemical instability on the Si surface. The surface morphology of the irradiated Si surfaces is examined by Atomic Force Microscopy (AFM). The surface contamination and corresponding chemical compound formation are investigated by X-ray photoelectron spectroscopy (XPS).
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