Si（001）上的keV离子诱导斑图形成是由金属杂质引起的吗？
Is keV ion induced pattern formation on Si(001) caused by metal impurities?
摘要：
我们提出了在超高真空中进行的离子束腐蚀实验，使用差分泵浦离子源，并注意离子束击中的Si（001）样品。在这些条件下，使用2 keV的Kr离子和2 x 10^22个离子/m^2的注量，在与整体表面法线成45度以下的角度时，不会在Si上形成离子束图案。事实上，离子束会使预先形成的图案变得平滑。不锈钢在此角度范围内的同时溅射沉积产生了各种图案，类似于先前归因于清洁离子束引起的表面轮廓不稳定的那些图案。仅对于入射角在60度和83度之间的掠入射，形成明显的离子束图案。看来，在清洁离子束腐蚀条件下，Si（001）相对于斑图形成的角相关稳定性与溅射产率的角相关性有关，而不是主要与连续统理论模型中频繁调用的曲率相关产率有关。
英文摘要：
We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles below 45 degrees with respect to the global surface normal using 2 keV Kr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces a smoothening of preformed patterns. Simultaneous sputter deposition of stainless steel in this angular range creates a variety of patterns, similar to those previously ascribed to clean ion beam induced destabilization of the surface profile. Only for grazing incidence with incident angles between 60 degrees and 83 degrees pronounced ion beam patterns form. It appears that the angular dependent stability of Si(001) against pattern formation under clean ion beam erosion conditions is related to the angular dependence of the sputtering yield, and not primarily to a curvature dependent yield as invoked frequently in continuum theory models.
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