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arXiv 1807.09752cond-mat.mes-hall
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谷型超晶格的实现

Realization of a Valley Superlattice

M. A. Mueed, Md. Shafayat Hossain, I. Jo, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

摘要:

在许多被广泛研究的材料中,例如Si、AlAs、Bi、石墨烯、MoS2和许多过渡金属二硫属化物单层,电子在简并导带最小值(也称为“谷”)处获得额外的类自旋自由度。外部对称性破缺场,如机械应变,或电场或磁场,可以调整这些材料的谷极化,使它们成为“谷电子学”的合适候选者。在这里,我们研究的量子阱的铝,其中的二维电子驻留在两个能量简并谷。通过在样品表面上制造应变诱导光栅,我们设计了不同谷中电子布居的空间调制,即,量子阱平面中的“谷超晶格”。我们的研究结果建立了一种新的谷自由度的操作技术,铺平了道路,实现谷选择性分层结构的多谷材料,在谷电子学的潜在应用。

英文摘要:

In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also known as "valleys". External symmetry breaking fields such as mechanical strain, or electric or magnetic fields, can tune the valley-polarization of these materials making them suitable candidates for "valleytronics". Here we study a quantum well of AlAs, where the two-dimensional electrons reside in two energetically degenerate valleys. By fabricating a strain-inducing grating on the sample surface, we engineer a spatial modulation of the electron population in different valleys, i.e., a "valley superlattice" in the quantum well plane. Our results establish a novel manipulation technique of the valley degree of freedom, paving the way to realizing a valley-selective layered structure in multi-valley materials, with potential application in valleytronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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