arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2001.02355cond-mat.mes-hall

Valley polarization and valleyresistance in monolayer transition metal dichalcogenides superlattice

Hui-Ying Mu, Yi-Tong Yao, Jie-Ru Li, Guo-Cai Liu, Chao He, Ying-Jie Sun, Guang Yang, Xing-Tao An, Yong-Zhe Zhang, Jian-Jun Liu

英文摘要:

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and regulate valley-polarized currents by practical ways. Here, we discover a new mechanism of producing valley polarization in a monolayer transition metal dichalcogenides superlattice, in which valley-resolved gaps are formed at the supercell Brillouin zone boundaries and centers due to the intervalley scattering. When the energy of the incident electron is in the gaps, the available states are valley polarized, thus providing a valley-polarized current from the superlattice. We show that the direction and strength of the valley polarization may further be tuned by varying the potential applied the superlattice. The transmission can have a net valley polarization of 55% for a 4-period heterojunction. Moreover, such two valley filters in series may function as an electrostatically controlled giant valleyresistance device, representing a zero magnetic field counterpart to the familiar giant magnetoresistance device.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑