arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1807.01716astro-ph.GA
收藏

空间SiS的形成与破坏

Formation and destruction of SiS in space

Alexandre Zanchet, Octavio Roncero, Marcelino Agúndez, José Cernicharo

摘要:

空间中的硅似乎仅限于少数几种选定的天文环境。长期以来,人们都知道它存在于演化恒星周围的星周包层中,并且在少数恒星形成区域中也发现了流出的证据,如Sgr\,B2,Orion\,KL和最近的L1157-B1。涉及SiS的反应动力学知之甚少,在这里,我们通过研究这种分子的形成和破坏的一些潜在的重要反应来重新审视空间中SiS的化学。我们计算了SiOS体系的{ \it ab initio}势能面,并计算了在50-2500 K温度范围内SiS与O原子碰撞破坏反应和Si与SO反应生成反应的速率系数。我们发现,这两个反应是快速的,与几倍10 $^{-10}$ cm $^3$ s $^{-1}$的速率系数,几乎与温度无关。在Si和SO之间的反应中,SiO的产生比SiS的形成效率高5-7倍。SiS与O原子的反应可以在破坏演化恒星周围包层中的SiS中发挥重要作用。我们建立了一个简单的激波后气体的化学模型来研究原恒星流出物中SiS的化学性质,发现SiS的形成丰度比SiO低,形成时间比SiO晚,SiS通过与O反应被有效地破坏,SiS的主要形成反应是Si + SO和Si + SO $_2$。

英文摘要:

The presence of SiS in space seems to be restricted to a few selected types of astronomical environments. It is long known to be present in circumstellar envelopes around evolved stars and it has also been detected in a handful of star-forming regions with evidence of outflows, like Sgr\,B2, Orion\,KL and more recently L1157-B1. The kinetics of reactions involving SiS is very poorly known and here we revisit the chemistry of SiS in space by studying some potentially important reactions of formation and destruction of this molecule. We calculated {\it ab initio} potential energy surfaces of the SiOS system and computed rate coefficients in the temperature range 50-2500 K for the reaction of destruction of SiS, in collisions with atomic O, and of its formation, through the reaction between Si and SO. We find that both reactions are rapid, with rate coefficients of a few times 10$^{-10}$ cm$^3$ s$^{-1}$, almost independent of temperature. In the reaction between Si and SO, SiO production is 5-7 times more efficient than SiS formation. The reaction of SiS with O atoms can play an important role in destroying SiS in envelopes around evolved stars. We built a simple chemical model of a postshock gas to study the chemistry of SiS in protostellar outflows and we found that SiS forms with a lower abundance and later than SiO, that SiS is efficiently destroyed through reaction with O, and that the main SiS-forming reactions are Si + SO and Si + SO$_2$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑