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arXiv 1807.00748physics.ins-det
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高纯锗中热致掺杂杂质的表征与模拟

Characterization and modeling of thermally-induced doping contaminants in high-purity Germanium

Virginia Boldrini, Gianluigi Maggioni, Sara Carturan, Walter Raniero, Francesco Sgarbossa, Ruggero Milazzo, Daniel Ricardo Napoli, Enrico Napolitani, Davide De Salvador

摘要:

高纯锗(HPGe)是生产γ射线探测器的关键材料。在形成探测器结所需的工艺过程中,其高纯度水平(<2x 10 ^(-4)ppb的掺杂杂质)必须保持在体中。为了提高器件性能和扩大应用领域,本文对多种掺杂工艺进行了评价,以验证它们对材料纯度的影响。更详细地,我们研究了由常规和非常规表面掺杂工艺(例如B离子注入、来自旋涂掺杂(SOD)源的P和Ga扩散、来自远程溅射源的Sb平衡扩散和溅射Sb的激光热退火(LTA))引起的体HPGe内部的污染掺杂缺陷或杂质的电激活。掺杂缺陷,在高温退火过程中被热激活,通过电测量表征。建立了描述污染过程的唯象模型,并用于分析扩散参数和可能的工艺热窗口。其结果是,被限制在HPGe表面的非平衡掺杂过程具有更高的可能性被成功地用于薄接触的形成,保持了体材料的原始纯度。其中,激光热退火是最有前途的。

英文摘要:

High purity Ge (HPGe) is the key material for gamma ray detector production. Its high purity level (< 2x10^(-4) ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the goal of improving the device performance and expanding the application fields, in this paper many alternative doping processes are evaluated, in order to verify their effect on the purity of the material. In more detail, we investigated the electrical activation of contaminating doping defects or impurities inside the bulk HPGe, induced by both conventional and non-conventional surface doping processes, such as B ion implantation, P and Ga diffusion from Spin-On Doping (SOD) sources, Sb equilibrium diffusion from a remote sputtered source and laser thermal annealing (LTA) of sputtered Sb. Doping defects, thermally-activated during high temperature annealing, were characterized through electrical measurements. A phenomenological model describing the contamination process was developed and used to analyze the diffusion parameters and possible process thermal windows. It resulted that out-of-equilibrium doping processes confined to the HPGe surface have higher possibilities to be successfully employed for the formation of thin contacts, maintaining the pristine purity of the bulk material. Among them, laser thermal annealing turned out to be the most promising.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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