Irradiation with high-energy particles has recently emerged as an effective tool for tailoring the properties of two-dimensional transition metal dichalcogenides. In order to carry out an atomically-precise manipulation of the lattice, a detailed understanding of the beam-induced events occurring at the atomic scale is necessary. Here, we investigate the response of $1T'$-MoS$_2$ to the electron irradiation by $ab$ $initio$ molecular dynamics means. Our simulations suggest that an electron beam with energy smaller than 75 keV does not result in any knock-on damage. The displacement threshold energies are different for the two nonequivalent sulfur atoms in $1T'$-MoS$_2$ and strongly depend on whether the top or bottom chalcogen layer is considered. As a result, a careful tuning of the beam energy can promote the formation of ordered defects in the sample. We further discuss the effect of the electron irradiation in the neighborhood of a defective site, the mobility of the sulfur vacancies created and their tendency to aggregate. Overall, our work provides useful guidelines for the imaging and the defect engineering of $1T'$-MoS$_2$ using electron microscopy.
In this work we develop an ab initio informed rate theory model to track the spatial and temporal evolution of implanted ions (Cr+) in Fe and Fe-14%Cr during high dose irradiation. We focus on the influence of the specimen surface, the depth dependence of ion-induced damage, the damage rate, and the consequences of ion implantation, all of which influence the depth dependence of alloy composition evolving with continued irradiation. We investigate chemical segregation effects in the material by considering the diffusion of the irradiation-induced defects. Moreover, we explore how temperature, …
On the basis of ab initio quantum mechanics (QM) calculation, the obtained electron heat capacity is implemented into energy equation of electron subsystem in two temperature model (TTM). Upon laser irradiation on the copper film, energy transfer from the electron subsystem to the lattice subsystem is modeled by including the electron-phonon coupling factor in molecular dynamics (MD) and TTM coupled simulation. The results show temperature and thermal melting difference between the QM-MD-TTM integrated simulation and pure MD-TTM coupled simulation. The successful construction of the QM-MD-TTM …
Defects creation and annihilation is a fundamental concept in device fabrication. This report studies the optical bandgap modification in MgO by MeV Ni ion irradiation-induced defect states between valance and conduction band. Ion implantation on MgO single crystal produces substitutional defect states along with F (anionic vacancy center), $F_2$, other oxygen vacancy center and V (cationic vacancy center) centers confirmed from absorption and photoluminescence spectra that can be applied as filament in valance charge memory based resistive random access memories. The variation of optical band…
An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) containing 64 germanium atoms with an ordered arrangement of 1.132 nm in each dimension, the femtosecond laser processing is simulated by imposing the Nose Hoover thermostat to the electronic subsystem …
The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of great importance to develop TMD-based multifunctional device applications, which remains challenging. Here, we report a strategy for controllable surface modification and layer thinning of MoS2 via ultraviolet (UV) light irradiation in a silver ionic solution environment. The results show that by adjusting UV irradiation time, nanostructured silver ultrathin …
Structural as well as magnetization studies have been carried out on graphite samples irradiated by neutrons over 50 years in the CIRUS research reactor at Trombay. Neutron diffraction studies reveal that the defects in irradiated graphite samples are not well annealed and remain significant up to high temperatures much greater than 653 K where the Wigner energy is completely released. We infer that the remnant defects may be intralayer Frenkel defects, which do not store large energy, unlike the interlayer Frenkel defects that store the Wigner energy. Magnetization studies on the irradiated g…
The occurrence of segregation in highly dilute alloys under irradiation is an unusual phenomenon that has so far eluded theoretical explanation. Using ab initio calculations, we are able to explain the origin of radiation-induced rhenium segregation in dilute tungsten-rhenium alloys.
Quantum-mechanical ab initio calculations are performed to elucidate the vibrational spectroscopic features of a common irradiation-induced defect in diamond, i.e. the neutral vacancy. Raman spectra are computed analytically through a Coupled-Perturbed-Hartree-Fock/Kohn-Sham approach as a function of both different defect spin states and defect concentration. The experimental Raman features of defective diamond located in the 400-1300 cm-1 spectral range, i.e. below the first-order line of pristine diamond at 1332 cm-1 , are well reproduced, thus corroborating the picture according to which, a…
Ab initio molecular dynamics simulations using VASP was employed to calculate threshold displacement energies and defect formation energies of Y4Zr3O12 δ-phase, which is the most commonly found phase in newly developed Zr and Al-containing ODS steels. The Threshold displacement energy (Ed) values are determined to be 28 eV for Zr3a primary knock-on atom along [111] direction, 40 eV for Zr18f atoms along [111] direction and 50 eV for Y recoils along [110] direction. Minimum Ed values for O and O' atoms are 13 eV and 16 eV respectively. The displacement energies of anions are much smaller compar…
$Ab$ $initio$ Study of Substitutional Defects in Li$_{3}$OCl Solid Electrolyte for Li-ion Batteries
University of Missouri Research Reactor, University of Missouri（密苏里大学研究反应堆，密苏里大学）；Department of Physics and Astronomy, University of Missouri（密苏里大学物理与天文学系）；Materials Science and Engineering Institute, University of Missouri（密苏里大学材料科学与工程研究所）；Department of Chemical and Biomedical Engineering, University of Missouri（密苏里大学化学与生物医学工程系）
Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV$^-$) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomarkers, or to hyperpolarize nuclear spins. NV$^-$ centers are formed from substitutional nitrogen (P1 centers) defects and vacancies in the diamond lattice. Maximizing the concentration of NVs is most beneficial, which justifies the search for methods with a high yield of conversion from P1 to NV$^-$. We report here the characterization of surface cleaned fluorescent micro- and nanodiamonds, obtained by irradiation of …
Graphene on hBN (G/hBN) has a long period moiré superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moiré superstructure induces modulation of electronic properties of the system. In this paper, we numerically calculate optical conductivity of G/hBN under circularly polarized light irradiation. The lack of spatial inversion symmetry in G/hBN induces the valley polarization. In further, the valley polarization becomes most pronounced in the infrared and terahertz regions if the twist angle between two materials is close to zero for non-dopin…
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching circuit components from these novel materials. Here we report on the scalable experimental realisation of lateral on-dielectric memtransistors from monolayer single-crystal molybdenum disulfide (MoS2) utilising a focused helium ion beam. Site-specific irradiation with the probe of a helium ion microscope (HIM) allows for the creation of charged defect…
The effect of femtosecond laser irradiation on bulk and single-layer MoS2 on silicon oxide is studied. Optical, Field Emission Scanning Electron Microscopy (FESEM) and Raman microscopies were used to quantify the damage. The intensity of A1g and E2g1 vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking and subsequent atoms removal due to electronic excitations. The single-pulse optical damage threshold was determined for the monolayer and bulk under 800nm and 1030nm pulsed laser irradiation and the…
In this paper, the Fe-20Ni-25Cr alloy that is used for fuel cladding or pressure vessels with various grain boundaries (GBs) was investigated by employing molecular dynamics simulations. The bi-crystals comprised of Σ3(111), Σ3(112), Σ9(114), Σ11(113), Σ19(116), and Σ17(223) types GBs were considered to systematically examine the interplay between irradiation defects, irradiation microstructure evolution under stress, and irradiation mechanical properties with irradiation intensity, coincidence site lattice parameter, tilt angle, and GB thickness. It is found that irradiated vacancies and inte…
Elastic constant C_{11} and piezoelectric stress constant e_{1,11} of two-dimensional (2D) dielectric materials comprising h-BN, 2H MoS2 and other transition metal dichalcogenides (TMDCs) and -dioxides (TMDOs) are calculated using lattice dynamical theory. The results are compared with corresponding quantities obtained by ab-initio calculations. We identify the difference between clamped-ion and relaxed-ion contributions with the dependence on inner strains which are due to the relative displacements of the ions in the unit cell. Lattice dynamics allows to express the inner strains contributio…
The excellent light yield proportionality of europium-doped strontium iodide (SrI$_2$:Eu) has resulted in state-of-the-art $γ$-ray detectors with remarkably high energy resolution, far exceeding that of most halide compounds. In this class of materials the formation of self-trapped hole polarons is very common. However, polaron formation is usually expected to limit carrier mobilities and has been associated with poor scintillator light-yield proportionality and resolution. Here, using a recently developed first-principles method, we perform an unprecedented study of polaron transport in SrI$_…
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spi…
Void swelling can develop in materials under persistent irradiation when non-equilibrium vacancy and self-interstitial populations migrate under sufficiently asymmetric interaction biases. In conventional metals, the propensity is determined to first approximation by comparing point-defect relaxation strains. We thus present DFT-based calculations of structures and formation energies and volumes of point defects in the $α$ and the $δ$-phases of plutonium. Our results show that lattice defects in $δ$-Pu, in contrast to most fcc metals, have surprisingly small formation volumes. Equally unexpect…
Synergetic effect of edge states and point defects to tune ferromagnetism in CVD-grown vertical nanostructured MoS2: A correlation between electronic structure and theoretical study
Defect engineering is applied to hybrid (CH$_3$NH$_3$)PbI$_3$ organic-inorganic perovskites. These materials have become one of the most promising low-cost alternatives to traditional semiconductors in the field of photovoltaics and light emitting devices. We use here Helium ion irradiation at low energy as a tool for the controlled introduction of point defects in both single crystals and polycrystalline thin films. The irradiation defects modify the opto-electronic properties as probed using photoluminescence spectroscopy from 10K to room-temperature. 2 Contrary to usual semiconductors, we o…
The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energies. However, the relevance of various interaction mechanisms is unknown. Here we show that for slow HCI (5 keV) the interaction mechanisms leading to particle emission by electronic excitation and tra…
Effects of electron-beam processing on the structure and mechanical properties of poly-ether-ether ketone (PEEK) were studied by XRD and tribological tests. An ambiguous change in the mechanical properties of the irradiated samples was found. In particular, the wear rate of sample 1 is higher than that of the unirradiated original sample, while it is lower for samples 2-7. Sample 4 had the lowest wear rate, and most likely the changes in the mechanical properties of the samples were due to the transformation of their amorphous component. Comparison of the X-ray spectra of the irradiated and un…
Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the N…
The presence of electron energy loss (EELS) peak is proposed theoretically in molybdenum disulfide (MoS2) nanosheets. Using density functional theory simulations and calculations, one EELS peak is identified in the visible energy range, for MoS2 nanosheets with molybdenum vacancy. Experimentally, four different laser sources are used for the Raman scattering study of MoS2 nanosheets, which show two distinct Raman peaks, one at 385 cm-1 (E12g) and the other at 408 cm-1 (A1g). In the cases of three laser sources with wavelengths 405 nm (3.06 eV), 632 nm (1.96 eV) and 785 nm (1.58 eV), respective…
