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arXiv 2301.02153cond-mat.mtrl-sci
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纳秒脉冲激光辐照下半导体熔化阈值的研究

On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

J. Beranek, A. V. Bulgakov, N. M. Bulgakova

AI总结:

本文通过统一数值模型和熔化分数方法,确定了五种半导体在纳秒激光辐照下的熔化阈值,并建立了基于材料性质和辐照条件评估熔化阈值的推广方法。

摘要:

本文采用统一数值模型确定了纳秒激光脉冲辐照下几种晶体半导体(Si、Ge、GaAs、CdTe 和 InP)的熔化阈值,并研究了其熔化初期阶段。采用熔化分数方法实现熔点处的连续过渡。将计算结果与先前发表的理论和实验数据进行了比较。对所选材料的热物理和光学性质进行了调研,以收集这些半导体在固态和液态下随温度变化性质的最相关数据(若可得)。建立了所得结果的推广,使得能够根据半导体性质及辐照条件(激光波长、脉冲持续时间)评估不同半导体的熔化阈值。

英文摘要:

In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established which enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration).

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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