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arXiv 2603.08005cond-mat.mtrl-sci
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Cr2Ge2Te6相变材料的熔化行为与动力学性质

Melting behavior and dynamical properties of Cr2Ge2Te6 phase-change material

Henan Academy of Sciences(河南省科学院);Xi’an Jiaotong University(西安交通大学);Sapienza University of Rome(罗马大学)

Suyang Sun, Yihui Jiang, Riccardo Mazzarello, Wei Zhang

AI总结:

通过AIMD模拟研究Cr2Ge2Te6熔化过程及动力学特性,揭示八面体结构稳定性与非晶态电阻漂移关系,解释CrGT器件结晶速度机制。

摘要:

Cr2Ge2Te6(CrGT)作为一种本征铁磁半导体和相变存储器的有前景候选材料,其非晶态中的Cr原子与Te原子形成非缺陷八面体结构,与晶体相类似。Cr[Te6]八面体的丰富程度被认为是减少非晶CrGT电阻漂移系数的关键结构因素。然而,这些八面体在熔融淬火非晶化过程中出现的阶段仍不清楚。本文通过从头算分子动力学(AIMD)模拟,对CrGT晶体的熔化过程进行建模,并详细研究了液态和过冷液态CrGT的动力学性质。加热过程中,Ge原子比Cr和Te原子更早离开晶格位点,扩散到范德华间隙并引发层状结构的崩溃。Cr[Te6]八面体更加坚固,在1400 K以下持续保持其结构模式,尽管Cr-Te键不断破裂和重新形成。在更高温度下,Cr和Te原子开始独立迁移。在550 K的过冷液态CrGT中,大多数Cr中心八面体保持完整,只有有限的Cr-Te键断裂。这一温度范围内的八面体集体运动有助于解释为什么CrGT器件的结晶可以在纳秒级内完成。

英文摘要:

Cr2Ge2Te6 (CrGT) is known as an intrinsic ferromagnetic semiconductor and a promising candidate for phase-change memory applications. In amorphous CrGT, Cr atoms form non-defective octahedral motifs with Te atoms, similar to those in the crystalline phase. The abundance of Cr[Te6] octahedra is regarded as the key structural factor in reducing the resistance drift coefficient of amorphous CrGT. However, the stage at which these octahedra emerge during melt-quench amorphization remains unclear. Here, we present ab initio molecular dynamics (AIMD) simulations to model the melting process of crystalline CrGT and to investigate the dynamical properties of liquid and supercooled liquid CrGT in detail. Upon heating, Ge atoms are observed to leave their lattice sites earlier than Cr and Te atoms, diffusing into the van der Waals gap and initiating the collapse of the layered structure. The Cr[Te6] octahedra are more robust, maintaining their structural pattern up to 1400 K despite continuous rupture and re-formation of Cr-Te bonds. At higher temperatures, Cr and Te atoms start to migrate independently. In supercooled liquid CrGT at 550 K, most Cr-centered octahedra remain intact, with only limited Cr-Te bond breaking. The collective motion of these octahedra in this temperature regime helps explain why crystallization in CrGT devices can be accomplished in tens of nanoseconds.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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