Well-Ordered In Adatoms at the In$_2$O$_3$(111) Surface Created by Fe Deposition
Margareta Wagner, Peter Lackner, Steffen Seiler, Stefan Gerhold, Jacek Osiecki, Karina Schulte, Lynn A. Boatner, Michael Schmid, Bernd Meyer, Ulrike Diebold
氧化物表面上的金属沉积通常导致沉积材料的吸附原子、簇或岛，其中表面中的缺陷通常充当成核中心。这里报告了一个备用配置。在室温下将Fe气相沉积在In $_2$ O $_3$（111）表面后，用扫描隧道显微镜观察到有序的吸附原子。这些是相同的在吸附原子时，形成的样品是通过加热在真空中减少。密度泛函理论（DFT）计算证实Fe与In在最顶层交换，将多余的In原子推到表面，在那里它们排列成有序的吸附原子阵列。
英文摘要：
Metal deposition on oxide surfaces usually results in adatoms, clusters, or islands of the deposited material, where defects in the surface often act as nucleation centers. Here an alternate configuration is reported. After the vapor deposition of Fe on the In$_2$O$_3$(111) surface at room temperature, ordered adatoms are observed with scanning tunneling microscopy. These are identical to the In adatoms that form when the sample is reduced by heating in ultrahigh vacuum. Density functional theory (DFT) calculations confirm that Fe interchanges with In in the topmost layer, pushing the excess In atoms to the surface where they arrange as a well-ordered adatom array.
We perform a kinetic Monte Carlo simulation study of a model of thin film deposition of a two-component mixture in which the activation energy for diffusion of an adatom is additive over its nearest neighbors and in which the interactions between adatoms of the same species are stronger than those between adatoms of different species. The film morphology is investigated for broad ranges of values of the ratios between terrace diffusivity and atomic flux, of the probabilities of detachment from lateral neighbors, and of probabilities of crossing terrace edges. First, we consider a symmetric cas…
The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in…
We present a joint experimental and theoretical determination of structures of Ag adatoms on the Ge(111) surface using low energy electron diffraction, low energy electron microscopy, scanning tunneling microscopy, and density functional theory-based calculations, as functions of coverages and temperature. Experimentally for clean Ge(111), c(2X8) and (2X1) phases occur, while Ag overlayers cause (4X4), (V3XV3)R30 and (3X1) surface structural phases. The dependence of the growth behavior of these different phases was examined as a function of temperature, Ag deposition rate and coverage, substr…
Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3
基于Bi $_{2}$ Te $_{3}$型拓扑绝缘体（TI）的异质外延结构表现出奇异的量子现象。为了最佳地表征这些现象，需要在这样的TI上的膜生长期间控制界面结构。在这个过程中，吸附原子的迁移率是一个关键因素。研究表明，在Si（111）-7 $\times$ 7衬底上生长的Bi $_{2}$ Te $_{3}$（111）薄膜中，由于点状缺陷的存在，在薄膜表面产生了工程局部应变ε，从而改变了Pb在Bi $_{2}$ Te $_{3}$（111）表面的迁移率.用扫描隧道显微镜观察了Pb在Bi $_{2}$ Te $_{3}$（111）表面上的吸附能和扩散势垒EPDMATHABMP，并对吸附能和扩散势垒进行了第一性原理密度泛函理论（DFT）分析.令人惊讶的是，由于在临界拉伸应变ε $_{c}$ 0.8%处稳定吸附位点的位置出现分叉，E $_d$显示出对ε的尖点样依赖性。这构成了一个非常不同的应变依赖性的扩散率从所有以前的研究集中在传统的金属或半导体表面。动力学Monte Carlo模拟铅沉积，扩散，不可逆聚集结合DFT结果揭示吸附原子和集群分布与我们的实验观察兼容。
Mullins' theory predicts the buildup of adatoms during surface diffusion at the edges of grooves where grain boundaries emerge to the surface of a polycrystalline film. However, the mesoscopic nature of this theory prevents the identification of the atomic scale physical mechanisms involved in this phenomenon. Here, we interpret the buildup of adatoms in atomistic terms through a mean-field rate-equation model and demonstrate both its kinetic nature and its impact on the intrinsic stress in these systems. Furthermore, the model provides estimates of the surface profile of intrinsic stress, of …
We explore the effect of ionization fraction on the epitaxial growth of Cu film on Cu (111) substrate at room temperature. We compare thermal evaporation, dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). Three deposition conditions i.e. fully neutral, 50% ionized and 100% ionized flux were considered as thermal evaporation, dcMS and HiPIMS, respectively, for ~20000 adatoms. It is shown that higher ionization fraction of the deposition flux leads to smoother surfaces by two major mechanisms i.e. decreasing clustering in the vapor phase and bi-collision of hig…
Surface diffusion has an impact on the lateral resolution of nanostructures in bottom-up atom nanofabrication. In this paper we study the effects of the gallium atoms self-assembled on silicon surfaces (100) patterned with trenches at different slopes. These particular substrate morphologies have been made to enable an effective deposition rate variation along the surface. In this way we experimentally mimic the effect of the atomic flux modulation created by standing wave during an atom nanofabrication experiment. Even if we observe self organization of gallium atoms on the surface, we conclu…
Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining) bulk. Studies of SmB6 thin films represent a favorable approach allowing well defined variations of the bulk volume that is not affected by surface states. Moreover, thin films are highly desirable for potential technology applications. However, the growth of SmB6 thin films is accompanied by technology problems, which are typically associated with maintaining …
