贵金属表面电子态的产生和调制：Si（111）-7 $\times$ 7上的Ag岛作为原型
Creating and modulating electronic states on noble metal surfaces: ultrathin Ag islands on Si(111)-7$\times$7 as a prototype
摘要：
采用高温一步沉积法在Si（111）7 $\times$ 7上制备了不同厚度的Ag岛。通过Ag和Si之间在Ag-Si界面处的电子杂化，在薄于9层的Ag岛的表面上可检测到中心为-0.40 $\sim$ -0.15eV（相对于E $_{Fermi}$）的电子态。扫描隧道显微镜/光谱和密度泛函理论表明，Ag岛的厚度决定了杂化的强度，导致对表面态的能量和强度的调制。
英文摘要：
Various-thickness Ag islands were prepared on Si(111)-7$\times$7 using the one-step deposition at a high substrate temperature. An electronic state centered at -0.40$\sim$-0.15eV versus E$_{Fermi}$, detectable on the surface of the Ag islands thinner than 9 layers, was created by the electronic hybridization between Ag and Si at the Ag-Si interface. Scanning tunneling microscopy/spectroscopy and density functional theory revealed that the thickness of Ag islands determined the strength of the hybridization, leading to a modulation to the energy and intensity of the state on the surface.
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