arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1802.09882cond-mat.supr-con
收藏

Sn $_{1-x}$ In $_x$ Te超导体系中电子和空穴对正常态输运的贡献

Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te

Cheng Zhang, Xu-Gang He, Hang Chi, Ruidan Zhong, Wei Ku, Genda Gu, J. M. Tranquada, Qiang Li

摘要:

铟掺杂的SnTe由于其具有拓扑表面态和体超导电性而受到人们的关注。虽然超导转变温度的提高,铟掺杂诱导的电子状态的字符仍然知之甚少。研究了含$0.1\le x \le 0.45$的Sn $_{1-x}$ In $_x$ Te系列单晶的磁输运性质。从霍尔效应的测量,我们发现,占主导地位的载流子类型的变化从空穴类电子在$x\sim0.25$ ;人们会期望电子类载流子,如果在离子具有$+3$的化合价。对于具有$x = 0.45$的单晶,对应于最高的超导转变温度,在正常状态下观察到明显的Shubnikov-de Haas振荡。在磁电阻的测量中,我们发现了弱反局域化(WAL)的证据。我们把量子振荡和WAL归因于先前在光电子发射研究中观察到的大体积Dirac-like空穴口袋,它们与占主导地位的电子类载流子共存。

英文摘要:

Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn$_{1-x}$In$_x$Te single crystals with $0.1\le x \le 0.45$. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at $x\sim0.25$; one would expect electron-like carriers if the In ions have a valence of $+3$. For single crystals with $x = 0.45$, corresponding to the highest superconducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we find evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑