arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1706.07565quant-phcond-mat.mes-hall
收藏

基于浮栅阵列的量子退火机

Quantum Annealing Machine based on Floating Gate Array

T. Tanamoto, Y. Higashi, T. Marukame, J. Deguchi

摘要:

基于超导量子比特的量子退火机有可能比数字计算机更快地解决优化问题,不仅对研究人员而且对公众都非常感兴趣。在这里,我们提出了一种基于半导体浮栅(FG)阵列的量子退火机。我们使用与商业FG NAND闪存相同的器件结构,除了较小的差异,如更薄的隧穿势垒。从理论上推导出FG系统单电子区的伊辛哈密顿量。最近的高密度NAND闪存存储器受到源自其小FG单元的若干问题的影响。为了可靠地存储信息,每个FG单元中的电子数量应该足够大。然而,存储在每个FG单元中的电子的数量变得更小并且可以是可计数的。因此,我们利用可计数电子区来操作FG电池的单电子效应。其次,在传统的NAND闪存中,FG单元的高密度通过它们的互电容耦合引起单元间干扰的问题。这种干扰问题通常通过使用纠错码软件的各种方法来解决。我们从这种自然的电容耦合推导出伊辛相互作用。考虑到电池的尺寸为10 nm,预期操作温度约为液氮的温度。如果使用商业64 Gbit NAND闪存,理想情况下,我们期望可以通过在与制造NAND闪存相同的工厂中使用常规制造工艺来构建2兆字节(MB)纠缠量子位。最高密度的量子比特系统将作为这个社会中常用存储器小型化的自然延伸而获得。

英文摘要:

Quantum annealing machines based on superconducting qubits, which have the potential to solve optimization problems faster than digital computers, are of great interest not only to researchers but also to the general public. Here, we propose a quantum annealing machine based on a semiconductor floating gate (FG) array. We use the same device structure as that of the commercial FG NAND flash memory except for small differences such as thinner tunneling barrier. We theoretically derive an Ising Hamiltonian from the FG system in its single-electron region. Recent high-density NAND flash memories are subject to several problems that originate from their small FG cells. In order to store information reliably, the number of electrons in each FG cell should be sufficiently large. However, the number of electrons stored in each FG cell becomes smaller and can be countable. So we utilize the countable electron region to operate single-electron effects of FG cells. Second, in the conventional NAND flash memory, the high density of FG cells induces the problem of cell-to-cell interference through their mutual capacitive couplings. This interference problem is usually solved by various methods using a software of error-correcting codes. We derive the Ising interaction from this natural capacitive coupling. Considering the size of the cell, 10 nm, the operation temperature is expected to be approximately that of a liquid nitrogen. If a commercial 64 Gbit NAND flash memory is used, ideally we expect it to be possible to construct 2 megabytes (MB) entangled qubits by using the conventional fabrication processes in the same factory as is used for manufacture of NAND flash memory. A qubit system of highest density will be obtained as a natural extension of the miniaturization of commonly used memories in this society.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑