用于改进完全自对准双浮栅单电子存储器中的电荷保持的能带工程
Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories
摘要：
我们提出了一种新的完全自对准单电子存储器与一对纳米浮栅，由不同的材料（硅和锗）。防止存储电荷泄漏的能量势垒不仅由量子效应引起，而且还由Ge和Si之间产生的导带偏移引起。每个浮置栅极的尺寸和位置被很好地限定和控制。该器件在室温下表现出较长的保留时间和单电子注入。
英文摘要：
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
