通过测量浮栅电压了解基于2D材料的浮栅型存储器件的存储窗口高估
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
摘要：
浮栅（FG）型非易失性存储器（NVM）器件的存储窗口是一个基本的品质因数，它不仅用于评估器件的保持和耐久性等性能，而且还用于讨论先进功能存储器器件的可行性。然而，基于二维（2D）材料的NVM器件的存储器窗口在历史上是根据圆形扫描转移曲线确定的，而传统Si NVM器件的存储器窗口是根据高阈值电压（Vth）和低阈值电压（Vth）确定的，高阈值电压和低阈值电压由单扫描转移曲线测量。这里，阐明了与从单次扫描转移曲线确定的存储器窗口相比，从圆形扫描转移曲线确定的2D NVM器件的存储器窗口被高估。在这项研究中提出的浮栅电压测量澄清，在圆扫描的Vth不仅由浮栅中存储的电荷的数量，但也由浮栅和背栅之间的电容耦合控制。目前的发现对存储器窗口的高估，使适当地评估的潜力的2D NVM设备。
英文摘要：
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced functional memory devices. However, the memory window of two dimensional (2D) materials based NVM devices is historically determined from round sweep transfer curves, while that of conventional Si NVM devices is determined from high and low threshold voltages (Vths), which are measured by single sweep transfer curves. Here, it is elucidated that the memory window of 2D NVM devices determined from round sweep transfer curves is overestimated compared with that determined from single sweep transfer curves. The floating gate voltage measurement proposed in this study clarifies that the Vths in round sweep are controlled not only by the number of charges stored in floating gate but also by capacitive coupling between floating gate and back gate. The present finding on the overestimation of memory window enables to appropriately evaluate the potential of 2D NVM devices.
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