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arXiv 1706.06346cond-mat.mtrl-sci
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高压下TiO2带隙的非预期鲁棒性

Unexpected Robustness of the Band Gaps of TiO2 under High Pressures

Yong Yang

摘要:

钛白(TiO 2)是一种具有很好应用前景的宽带隙半导体材料。在这里,我们提出了第一性原理计算研究的结构和电子性质的压力依赖性的两个TiO 2相:钴钨石型和Fe 2 P型结构。用广义梯度近似(GGA)的密度泛函理论(DFT),以及GW近似的多体微扰理论计算的带隙。两个阶段的带隙被发现是出乎意料的强大在一个宽范围的压力。相应的压力系数明显小于金刚石和碳化硅(SiC)的压力系数,金刚石和碳化硅的压力系数是实验测得的最小值。这种鲁棒性来源于价带峰和导带峰的同步变化,它们的变化率几乎相同。在相变压力点附近的带隙的台阶状跳跃是预期的,并且根据晶体结构的差异来理解。

英文摘要:

Titanium dioxide (TiO2) is a wide band gap semiconducting material which is promising for photocatalysis. Here we present first-principles calculations to study the pressure dependence of structural and electronic properties of two TiO2 phases: the cotunnite-type and the Fe2P-type structure. The band gaps are calculated using density functional theory (DFT) with the generalized gradient approximation (GGA), as well as the many-body perturbation theory with the GW approximation. The band gaps of both phases are found to be unexpectedly robust across a broad range pressures. The corresponding pressure coefficients are significantly smaller than that of diamond and silicon carbide (SiC), whose pressure coefficient is the smallest value ever measured by experiment. The robustness originates from the synchronous change of valence band maximum (VBM) and conduction band minimum (CBM) with nearly identical rates of changes. A step-like jump of band gaps around the phase transition pressure point is expected and understood in light of the difference in crystal structures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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