arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1706.06313cond-mat.mes-hall
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光学活性缺陷的纳米分辨率成像

Imaging of optically active defects with nanometer resolution

Jiandong Feng, Hendrik Deschout, Sabina Caneva, Stephan Hofmann, Ivor Lončarić, Predrag Lazić, Aleksandra Radenovic

摘要:

由于点缺陷与载流子的相互作用,降低了带间光跃迁能量,从而对固态材料的光学和电学性质产生显著影响。一直存在开发直接光学成像方法的需求,该直接光学成像方法将允许以纳米分辨率对单个缺陷进行原位表征。在这里,我们展示了使用单分子定位显微镜在单层六方氮化硼中的单个光学活性缺陷的定位和定量计数。通过利用缺陷发射器的闪烁行为在时间上隔离一个衍射限制区域内的多个发射器,我们可以解决两个缺陷发射器的点对点距离下降到10纳米。本工作的结果和结论为缺陷在量子信息处理和生物成像中的未来应用增添了前所未有的维度。

英文摘要:

Point defects significantly influence the optical and electrical properties of solid-state materials due to their interactions with charge carriers, which reduce the band-to-band optical transition energy. There has been a demand for developing direct optical imaging methods that would allow in-situ characterization of individual defects with nanometer resolution. Here, we demonstrate the localization and quantitative counting of individual optically active defects in monolayer hexagonal boron nitride using single molecule localization microscopy. By exploiting the blinking behavior of defect emitters to temporally isolate multiple emitters within one diffraction limited region, we could resolve two defect emitters with a point-to-point distance down to ten nanometers. The results and conclusion presented in this work add unprecedented dimensions towards future applications of defects in quantum information processing and biological imaging.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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