The discovery of high-temperature superconductivity in FeSe/STO has trigged great research interest to reveal a range of exotic physical phenomena in this novel material. Here we present a temperature dependent magnetotransport measurement for ultrathin FeSe/STO films with different thickness and protection layers. Remarkably, a surprising linear magnetoresistance (LMR) is observed around the superconducting transition temperatures but absent otherwise. The experimental LMR can be reproduced by magnetotransport calculations based on a model of magnetic field dependent disorder induced by spin fluctuation. Thus, the observed LMR in coexistence with superconductivity provides the first magnetotransport signature for spin fluctuation around the superconducting transition region in ultrathin FeSe/STO films.
Ultrathin FeSe films grown on SrTiO$_{3}$ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. Using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO$_{3}$ films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump-probe delay for 1 unit cell, 3 unit cell, and 60 unit cell thick FeSe films. The frequencies of the coherent inten…
Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices.
We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curie temperature (TC) which decrease as the film thickness increases. The sign reversal of AMR (with a maximum value of - 6) with magnetic field or temperature for the 4 nm thin film may be attributed to the increase in tensile strain in the plane of the thin film which in turn facilitates the rotatio…
We have investigated the magnetoresistance of Permalloy (Ni80Fe20) films with thicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO and SiO2 substrates. Growth and transport measurements were carried out under cryogenic conditions in UHV. Applying in-plane magnetic vector fields up to 100 mT, the magnetotransport properties are ascertained during growth. With increasing thickness the films exhibit a gradual transition from tunneling magnetoresistance to anisotropic magnetoresistance. This corresponds to the evolution of the film structure from separated small islands to a n…
High temperature superconductivity in one unit cell (1 UC) FeSe on SrTiO3 heterostructure has become a research frontier in condensed matter physics and material science. The superconducting transition temperature (Tc) of ultrathin FeSe film is significantly enhanced compared to its bulk counterpart and possibly approaches the liquid nitrogen region according to in situ spectroscopic measurements. Particularly, the Fermi surface topology of 1 UC FeSe consists of no hole pockets at Brillouin zone center, which poses a great challenge to the well accepted s+- wave pairing nesting the sign differ…
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance o…
Linear nonsaturating magnetoresistance (LMR) represents a class of anomalous resistivity response to external magnetic field that has been observed in a variety of materials including but not limited to topological semi-metals, high-Tc superconductors and materials with charge/spin density wave (CDW/SDW) orders. Here we report the observation of LMR in layered kagome superconductor and CDW material CsV3Sb5 thin flakes, as well as the dimensional crossover and temperature (T) crossover of such LMR. Specifically, in ultrathin CsV3Sb5 crystals, the magnetoresistance (MR) exhibits a crossover from…
In an ultrathin topological insulator (TI) film, a hybridization gap opens in the TI surface states, and the system is expected to become either a trivial insulator or a quantum spin Hall insulator when the chemical potential is within the hybridization gap. Here we show, however, that these insulating states are destroyed by the presence of a large and long-range-correlated disorder potential, which converts the expected insulator into a metal. We perform transport measurements in ultrathin, dual-gated topological insulator films as a function of temperature, gate voltage, and magnetic field,…
We present magnetoresistance measurements performed on ultrathin films of amorphous Ni and Fe. In these films the Curie temperature drops to zero at small thickness, making it possible to study the effect of ferromagnetism on localization. We find that non-ferromagnetic films are characterized by positive magnetoresistance. This is interpreted as resulting from weak antilocalization due to strong Bychkov-Rashba spin orbit scattering. As the films become ferromagnetic the magnetoresistance changes sign and becomes negative. We analyze our data to identify the individual contributions of weak lo…
Due to their exceptional topological and dynamical properties magnetic skyrmions - localized stable spin structures on the nanometre scale - show great promise for future spintronic applications. To become technologically competitive, isolated skyrmions with diameters below 10 nm that are stable at zero magnetic field and room temperature are desired. Despite finding skyrmions in a wide spectrum of materials, the quest for a material with these envisioned properties is still ongoing. Here we report zero field isolated skyrmions with diameters smaller than 5 nm coexisting with 1 nm thin domain …
We have observed a super-giant (~10,000,000%) negative magnetoresistance at 39 mT field in Cu nanowires contacted with Au contact pads. In these nanowires, potential barriers form at the two Cu/Au interfaces because of Cu oxidation that results in an ultrathin copper oxide layer forming between Cu and Au. Current flows when electrons tunnel through, and/or thermionically emit over, these barriers. A magnetic field applied transverse to the direction of current flow along the wire deflects electrons toward one edge of the wire because of the Lorentz force, causing electron accumulation at that …
We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the damping-like spin-orbit torque decreases substantially for all samples with a spacer layer compared to the reference Pt/Co bilayer, consistently with the opposite sign of the atomic spin-orbit coupling constant of the spacer elements relative to Pt. The reduction of the damping-like torque is monotonic with atomic number for the isoelectronic 3d, 4d, and 5d elements,…
The discovery of ferromagnetism in two-dimensional (2D) monolayers has stimulated growing research interest in both spintronics and material science. However, these 2D ferromagnetic layers are mainly prepared through an incompatible approach for large-scale fabrication and integration, and moreover, a fundamental question whether the observed ferromagnetism actually correlates with the 2D crystalline order has not been explored. Here, we choose a typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues by investigating its ferromagnetism in an amorphous state. We have fabricate…
Current-induced spin-orbit torques in Co$_2$FeAl/Pt ultrathin bilayers are studied using a magnetoresistive harmonic response technique, which distinguishes the dampinglike and fieldlike contributions. The presence of a temperature-dependent magnetic proximity effect is observed through the anomalous Hall and anisotropic magnetoresistances, which are enhanced at low temperatures for thin platinum thicknesses. The fieldlike torque efficiency decreases steadily as the temperature is lowered for all Pt thicknesses studied, which we propose is related to the influence of the magnetic proximity eff…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion mo…
