We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the damping-like spin-orbit torque decreases substantially for all samples with a spacer layer compared to the reference Pt/Co bilayer, consistently with the opposite sign of the atomic spin-orbit coupling constant of the spacer elements relative to Pt. The reduction of the damping-like torque is monotonic with atomic number for the isoelectronic 3d, 4d, and 5d elements, with the exception of V that has a stronger effect than Cr. The field-like spin-orbit torque almost vanishes for all spacer layers irrespective of their composition, suggesting that this torque predominantly originates at the Pt/Co interface. The anomalous Hall effect, magnetoresistance, and saturation magnetization are also all reduced substantially, whereas the sheet resistance is increased in the presence of the spacer layer. Finally, we evidence a correlation between the amplitude of the spin-orbit torques, the spin Hall-like magnetoresistance, and the perpendicular magnetic anisotropy. These results highlight the significant influence of ultrathin spacer layers on the magnetotransport properties of heavy metal/ferromagnetic systems.
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer at the barrier-electrode interface. It is shown that momentum selection due to the insulating barrier and conduction via quantum well states in the spacer, mediated by diffusive scattering caused by disorder, are essential features required to explain the observed period of oscillation in the TMR ratio and its asymptotic value for thick nonmagnetic spacer.
Magnanite multilayers have been fabricated using La0.67Ca0.33MnO3 as the ferromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layers. All the multilayers were grown on LaAlO3 (100) by pulse laser deposition. An enhanced magnetoresistnace (defined (RH- R0)/R0) of more than 98% is observed in these multilayers. Also a low field magnetoresistance of 41% at 5000 Oe is observed in these multilayer films. The enhanced MR is attributed to the induced double exchange in the spacer layer, which is giving rise to more number of conducting carriers. This is compared by replacing the sp…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and Co layers separated by a Pt or Cu spacer. Current injection through such layers exerts spin-orbit torques and switches the magnetization of the Co layer while the TbCo magnetization remains fixed. Subsequent current injection of lower amplitude senses the relative orientation of the magnetization of the Co and TbCo layers, which results in two distinct resis…
Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is characterized in an analytical form, that is expressed with the transmission and reflection amplitudes of single interfaces at the Fermi level, and by the extremal wavevectors. Electronic structures with multiple bands are taken into account in the derivation characterizing the TMR, and the proposed analytical expression can be directly applied to real junctio…
Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a…
We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the sp…
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths.
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the spacer particle containing only a single energy level. It was shown that Coulomb interactions of electrons with a different spin orientation lead to an increase of the tunnel magnetoresistance. Interactions can also be responsible for the negative differential resistance. A current noise study showed, which relaxation processes can enhance or reduce fluctuations …
The thickness dependence of spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers is studied using the first-principles non-equilibrium Green's function formalism combined with the Anderson disorder model. A systematic expansion in orthogonal vector spherical harmonics is used for the angular dependence of the torque. The damping-like torque in Co/Pt and Co/Au bilayers can be described as a sum of the spin-Hall contribution, which increases with thickness in agreement with the spin-diffusion model, and a comparable interfacial contribution. The magnetoconductance in the p…
Spacer thickness and electrical conditioning have their own influence in enhancing giant magnetoresistance (GMR) ratio. At some condition one factor can override the other as reported by experiment results. An empiric model about competition about these two factors is discussed in this work. Comparison from experiment results to validate the model are also shown and explained. A formulation is proposed to extend the existing one that now accommodates both spacer thickness and electrical conditioning in one form.
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.
A new proposal is given to achieve high degree of magnetoresistance (MR) in a magnetic quantum device where two magnetic layers are separated by a non-magnetic (NM) quasiperiodic layer that acts as a spacer. The NM spacer is chosen in the form of well-known Aubry-André or Harper (AAH) model which essentially gives the non-trivial features in MR due to its gaped spectrum and yields the opportunities of controlling MR selectively by tuning the AAH phase externally. We also explore the role of dephasing on magnetotransport to make the model more realistic. Finally, we illustrate the experimental …
We propose an experimental scheme to determine the spin-transfer torque efficiency excited by the spin-orbit interaction in ferromagnetic bilayers from the measurement of the longitudinal magnetoresistace. Solving a diffusive spin-transport theory with appropriate boundary conditions gives an analytical formula of the longitudinal charge current density. The longitudinal charge current has a term that is proportional to the square of the spin-transfer torque efficiency and that also depends on the ratio of the film thickness to the spin diffusion length of the ferromagnet. Extracting this cont…
Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show how these effects can be used to reliably switch perpendicularly magnetized layers and to move domain walls. A drift-diffusion treatment of the anomalous Hall effect and the anisotropic magnetoresistance describes the spin currents that flow in directions perpendicular to the electric field. In systems with two ferromagnetic layers separated by a spacer laye…
Spin torque oscillators placed onto a nonmagnetic heavy metal show synchronized auto-oscillations due to the coupling originating from spin Hall magnetoresistance effect. Here, we study a system having two spin torque oscillators under the effect of the spin Hall torque, and show that switching the external current direction enables us to control the phase difference of the synchronization between in-phase and antiphase.
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and nonmagnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magne…
The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic (NM) metallic spacer. The effect of spin fluctuation in magnetic barrier, which plays an important role at finite temperature, is included by taking the mean-field approximation. It is found that, the tunnel magnetoresistance (TMR) and the electron-spin polarization depend strongly on the temperature and the applied voltage. The TMR and spin polarization at di…
We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT efficiencies are larger for the trilayers as compared to the bilayers, confirming the enhanced values reported for the trilayers with perpendicularly magnetized Co. The maximum effective spin Hall angl…
We study a triplet spin valve obtained by intercalating a triplet superconductor spacer between two ferromagnetic regions with non-collinear magnetizations. We demonstrate that the magnetoresitance of the triplet spin valve depends on the relative orientations of the d-vector, characterizing the superconducting state, and the magnetization directions of the ferromagnetic layers. For devices characterized by a long superconductor, the Cooper pairs spintronics regime is reached allowing to observe the properties of a polarized current sustained by Cooper pairs only. In this regime a super-magnet…
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effect…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Ha…
The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of the W/CoFeB/MgO structures and its correlation to the current-induced torque to the magnetization. We observe that the MR is independent of the angle between magnetization and curren…
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and anti-parallel states of the junction. In addition, we show that the non-collinear order results in a spin-transfer torque that is in several key aspects diffe…
Spin valves incorporating perpendicularly magnetized materials are promising structures for memory elements and high-frequency generators. We report the angular dependence of the spin-transfer torque in spin valves with perpendicular equilibrium magnetization computed by first-principles circuit theory and compare results with experiments by W.H. Rippard c.s. [Phys. Rev. B 81, 014426 (2010)] on the CoFe|Cu|CoNi system. Furthermore, we predict a non-monotonous ("wavy") spin-transfer torque when the Cu spacer is replaced by a Ru layer.
We predict that the magnetization direction of a ferromagnet can be reversed by the spin-transfer torque accompanying spin-polarized thermoelectric heat currents. We illustrate the concept by applying a finite-element theory of thermoelectric transport in disordered magnetoelectronic circuits and devices to metallic spin valves. When thermalization is not complete, a spin heat accumulation vector is found in the normal metal spacer, i.e., a directional imbalance in the temperature of majority and minority spins.
The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with the Co concentration in contradiction with previous calculations but in agreement with recent experiments. This dependence is explained from bulk properties of the alloys. By using a realistic description of the disorder in the alloys we can show that even small amounts of disorder lead to a drastic drop in the tunneling magnetoresistance. This provides a quan…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in the tunnel junction and to an effective spin-orbit coupling induced by the topology of the localized magnetic moments in the multiferroic spacer. The predicted TAMR effect is efficiently controllable by an external electric field due to the magnetoelectric coupling.
We calculate the resistivity and Giant Magnetoresistance (GMR) of a segmented nanowire consisting of two ferromagnetic segments separated by a thin paramagnetic spacer. The quantization of the electron motion due to the small nanowire cross-section is taken into account; s-d electron scattering gives rise to different mean free paths for spin-up and spin-down s-electrons. The calculated resistivity and GMR oscillate as a function of nanowire cross-section due to the difference in Fermi momenta of d-electrons with opposite spins. The GMR can reach values much higher than those which are obtaine…
Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are considered, including B atoms replacing Mg atoms (Mg$_3$BO$_4$), B atoms replacing O atoms (Mg$_4$BO$_3$), and B atoms occupying interstitial positions (Mg$_4$BO$_4$) in MgO. A strong asymmetric angular dependence of STT can be obtained both in ballistic CoFe/Mg$_3$BO$_4$ and CoFe/Mg$_4$BO$_4$ based MTJs, whereas a nearly symmetric STT curve is observed in the junc…
Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR de…
Using a multilayer structure containing (cobalt detector layer)/(copper spacer)/(Permalloy source layer), we show experimentally how the non-reorientable spin-orbit torque generated by the Permalloy source layer (the component of spin-orbit torque that does not change when the Permalloy magnetization is rotated) can be measured using spin-torque ferromagnetic resonance (ST-FMR) with lineshape analysis. We find that dynamic spin pumping between the magnetic layers exerts torques on the magnetic layers as large or larger than the spin-orbit torques, so that if dynamic spin pumping is neglected t…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and the nearly-free-electron-approximation the dependence of the tunnel magnetoresistance (TMR) and electron-spin polarization on the nonmagnetic layer thickness and the applied bias voltage are studied theoretically. The TMR and spin polarization show an oscillatory behavior as a function of the spacer thickness and the bias voltage. The oscillations originate…
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque (SOT). Concentrating on the quasiballistic limit, we also predict a giant anisotropic magnetoresistance (AMR) at low dopings. These effects, which have no counterparts in thick TIs, depend on the simultaneous presence of the hybridization between the surface states and the in-plane magnetization. Both the ISGE and AMR exhibit a strong dependence on the magn…
AlN and ZnO, two wide band-gap semiconductors extensively used in the display industry, crystallise in the wurtzite structure, which can favour the formation of epitaxial interfaces to close-packed common ferromagnets. Here we explore these semiconductors as material for insulating barriers in magnetic tunnel junctions. In particular, the {\it ab initio} quantum transport code {\it Smeagol} is used to model the $X$[111]/$Y$[0001]/$X$[111] ($X=$ Co and Fe, $Y=$ AlN and ZnO) family of junctions. Both semiconductors display a valance-band top with $p$-orbital character, while the conduction band …
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending on the relative alignment of the two fixed layers, either augments or diminishes the net spin-torque exerted on the free layer. The compound structure allows a quantitative comparison of spin-torque from tunneling electrons and from electrons passing through metallic spacer layers, as well as analysis of Joule selfheating effects. This has significance for c…
We theoretically study the spin current and spin-transfer torque generation in a conventional spin- valve hybrid structure of type ferromagnetic/normal metal/ferromagnetic (FM/NM/FM) made of the topological insulator (TI), in which a gate voltage is attached to the normal layer. We demonstrate the penetration of the spin-transfer torque into the right ferromagnetic layer and show that, unlike graphene spin-valve junction, the spin-transfer torque in TI is very sensitive to the chemical potential of the NM region. As an important result, by changing the chemical potential of the NM spacer and m…
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.
Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM) and nonmagnetic (NM) metals are ultra-compact current-controlled microwave signal sources. They serve as a convenient testbed for studies of spin-orbit torque physics and are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip-to-chip wireless communications. However, a major drawback of these devices is low output microwave power arising from the relatively small anisotropic magnetoresistance (AMR) of the FM layer. Here we experimentally show that the ou…
Absence of Orbital Hall Magnetoresistance in Nonmagnet/Ferromagnet Bilayers with Large Orbital Torque
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所）；College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences（中国科学院大学材料科学与光电技术学院）；Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University（北京航空航天大学集成电路科学与工程学院）；National Key Laboratory of Spintronics Hangzhou International Innovation Institute Beihang University（北京航空航天大学杭州创新研究院）；Southwest Institute of Technical Physics（西南技术物理研究所）
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are identified: A spin-dependent-scattering mechanism regime at small current densities $J \sim$ $10$$^{9}$A/m$^{2}$ (UMR ratio $\propto$ $J$), a spin-magnon-interaction mechanism regime at intermediate $J \sim$ $10$$^{10}$A/m$^{2}$ (UMR ratio $\propto$ $J$$^{3}$), and a spin-transfer torque (STT) regime at $J \sim$ $10$$^{11}$A/m$^{2}$ (UMR ratio independent of $J$). …
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significant perpendicular-to-plane current paths. This effect allows the determination of TMR ratios of MTJs based on a simplified in-plane measurement. However, the same effect can lead to an inaccurate deter…
We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR) of YIG/Pt, but has a much larger anisotropy, of the order of 0.5%, which increases with the atomic number of the NM. This SMR-like behavior is absent in light NM/Co bilayers (NM = Ti, Cu), which pre…
We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high …
We report on investigation of spin Hall magnetoresistance sensor based on NiFe/AuxPt1-x bilayers. Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibits a much lower power consumption (reduced by about 57%), due to 80% enhancement of spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x = 0.19 as compared to pure Pt. The enhanced spin-orbit torque efficiency allows to increase the thickness of NiFe from 1.8 nm to 2.5 nm without significantly increasing the power consumption. We show that, by increasing the NiFe thickness, we were able to improve the working field range (0.86 …
The effective field torque of an yttrium-iron-garnet film on the spin accumulation in an attached Pt film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental transverse and longitudinal resistances are well described by the theoretical model of SMR in terms of the direct and inverse spin-Hall effect, for different Pt thicknesses [3, 4, 8 and 35nm]. Adopting a spin-Hall angle of Pt $θ_{SH}=0.08$, we obtain the spin diffusion length of Pt ($λ=1.1\pm0.3$nm) as well as the real…
Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion mo…
The spin transfer torque in all-metal dual spin valve, in which two antiparallelly aligned pinned ferromagnetic layers are on the two sides of a free ferromagnetic layer with two thin nonmagnetic spacers in between, is studied in the ballistic regime. It is argued that, similar to the results in the diffusion regime, the spin transfer torque is dramatically enhanced in comparison to that in a conventional spin valve although no spin accumulation exists at the magnetic-nonmagnetic interfaces. Within the Slonczewski's approach, an analytical expression of the torque on the free magnetic layer is…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with special characteristics is becoming more and more prevalent. We now present a full quantum investigation of the magnetoresistance and the spin transfer torque in a domain wall, which is embedded in a nano-contact of Ni$_{80}$Fe$_ {20}$, where the size of the domain wall becomes a relevant tunable parameter. The dependence on the domain wall width as well as the…
Spin-orbit-torque-driven dynamics have recently gained interest in the field of magnetism due to the reduced requirement of current densities and an increase in efficiency, as well as the ease of implementation of different devices and materials. From a practical point of view, the low-frequency dynamics below 1 GHz is particularly interesting since dynamics associated with magnetic domains lie in this frequency range. While spin-torque excitation of high-frequency modes has been extensively studied, the intermediate low-frequency dynamics have received less attention, although spin torques co…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal metal due to the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. …
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer material known for exhibiting large IEC. The basic idea relies on the formation of a quantum-well (QW) within the spacer material and controlling the transmission coefficient across the structure with an electric-field via the resonant tunneling phenomena. Using non-equilibrium Green's function (NEGF) method, we show that the structure can exhibit a bias-depe…
Estimation of spin-orbit torques in the presence of current-induced magnon creation and annihilation
Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg（斯特拉斯堡大学，法国国家科学研究中心，斯特拉斯堡材料与化学物理研究所）；ETH Zurich（苏黎世联邦理工学院）；Politecnico di Milano（米兰理工大学）
This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of th…
A mechanical equivalent system is introduced to mimic the behavior of multilayer structures with diffusive spin transport. The analogy allows one to use existing mechanical intuition to predict the influence of various parameters on spin torques and spin-dependent magnetoresistance. In particular, it provides an understanding of the sign-changing behavior of spin torque in asymmetric F/N/F spin valves. It further helps to uncover the physical reason behind the singular behavior of spin magnetoresistance in devices with ultra-thin N-layers.
