二次中性质谱条件下氩等离子体溅射PbTe晶体表面形貌
Morphology of PbTe crystal surface sputtered by argon plasma under Secondary Neutral Mass Spectrometry conditions
摘要：
在二次中性质谱（SNMS）条件下，研究了坩埚下降法生长的PbTe晶体样品的侧面形貌。溅射的PbTe晶体表面被发现是同时的溅射材料的源和有效的基板的溅射材料的再沉积过程中的深度剖析。在溅射过程中，PbTe晶体表面形成了浅坑起伏。溅射的Pb和Te在PbTe晶体溅射表面重新沉积形成了小丘、金字塔、圆锥等形状的微观表面结构阵列。再沉积的微观表面结构，它们的形状，和平均尺寸，一方面，和能量和溅射的持续时间，另一方面，密度之间的相关性被揭示。
英文摘要：
We have investigated morphology of the lateral surfaces of PbTe crystal samples grown from melt by the Bridgman method sputtered by Ar+ plasma with ion energy of 50-550 eV for 5-50 minutes under Secondary Neutral Mass Spectrometry (SNMS) conditions. The sputtered PbTe crystal surface was found to be simultaneously both the source of sputtered material and the efficient substrate for re-deposition of the sputtered material during the depth profiling. During sputtering PbTe crystal surface is forming the dimple relief. To be redeposited the sputtered Pb and Te form arrays of the microscopic surface structures in the shapes of hillocks, pyramids, cones and others on the PbTe crystal sputtered surface. Correlation between the density of re-deposited microscopic surface structures, their shape, and average size, on the one hand, and the energy and duration of sputtering, on the other, is revealed.
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