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arXiv 1608.05018cond-mat.mtrl-sci
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8-Pmmn硼化物的电子性质

Electronic properties of 8-Pmmn borophene

Alejandro Lopez-Bezanilla, Peter B. Littlewood

摘要:

第一性原理计算的单层8-{ \it Pmmn}硼化物的报道,揭示了前所未有的电子性质在一个二维材料。基于玻恩有效电荷分析,8-{ \it Pmmn}硼化物是第一种基于单元素的单层材料,其显示出具有实质性离子特征的两个亚晶格。观察到的狄拉克锥实际上是由一个由唯一四个原子组成的不等价子晶格的p $_z$轨道形成的,产生了一个拓扑上等价于扭曲石墨烯的底层六边形网络。该效应的显著物理结果包括通过外部剪切应力将金属8-{ \it Pmmn}硼化物转化为间接带隙半导体的可能性。应变结构的稳定性得到声子频率分析的支持。狄拉克锥只对费米能级上电子活跃的不等价亚晶格中空位的形成敏感。

英文摘要:

First-principles calculations on monolayer 8-{\it Pmmn} borophene are reported to reveal unprecedented electronic properties in a two-dimensional material. Based on a Born effective charge analysis, 8-{\it Pmmn} borophene is the first single-element based monolayered material exhibiting two sublattices with substantial ionic features. The observed Dirac cones are actually formed by the p$_z$ orbitals of one of the inequivalent sublattices composed of uniquely four atoms, yielding an underlying hexagonal network topologically equivalent to distorted graphene. A significant physical outcome of this effect includes the possibility of converting metallic 8-{\it Pmmn} borophene into an indirect band gap semiconductor by means of external shear stress. The stability of the strained structures are supported by a phonon frequency analysis. The Dirac cones are sensitive to the formation of vacancies only in the inequivalent sublattice electronically active at the Fermi level.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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