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arXiv 1606.09112cond-mat.str-el
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相对论莫特绝缘体Sr $_2$ IrO $_4$中电子和空穴掺杂的第一性原理能带展开研究

Electron and hole doping in the relativistic Mott insulator Sr$_2$IrO$_4$: a first-principles study using band unfolding technique

Peitao Liu, Michele Reticcioli, Bongjae Kim, Alessandra Continenza, Georg Kresse, D. D. Sarma, Xing-Qiu Chen, Cesare Franchini

摘要:

采用完全相对论性和磁非共线密度泛函理论研究了La和Rh掺杂对相对论性莫特绝缘体Sr $_2$ IrO $_4$电子结构的影响.为了模拟掺杂效应,我们采用了超原胞方法,该方法允许对结构弛豫和电子效应进行现实的处理,而不仅仅是纯粹的刚性带方法。利用能带展开技术计算了谱函数,构造了有效能带结构和费米面,并与已有的实验数据进行了比较。我们的计算清楚地表明,La和Rh掺杂可以被解释为有效的电子和(分数)空穴掺杂,分别。在Sr $_{2-x}$ La $_x$ IrO $_4$的IMT是伴随着一个温和的重整化的电子相关证实了减少有效的现场库仑排斥$U-J$从1.6 eV($x=0$)到1.4 eV(金属制度$x=12.5\%$)。相对论性莫特间隙的逐渐闭合导致在FS中的($π$ /2,$π$ /2)和$X$处的较低强度特征处出现连接的椭圆形电子袋。用名义上等价的Rh取代Ir伴随着从Rh位点到最近邻Ir位点的大量空穴转移。这向下移动的化学势,创建几乎是圆形的断开孔袋在FS和建立一个二维的金属状态的出现所形成的导电Rh-平面插入绝缘Ir-平面。最后,我们的数据表明,空穴掺杂引起的翻转的面内净铁磁矩在Rh平面,并诱导从AF-I的AF-II顺序的磁过渡。

英文摘要:

We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard $U$. To model doping effects, we have adopted the supercell approach that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS), which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. In Sr$_{2-x}$La$_x$IrO$_4$ the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion $U-J$ from 1.6 eV ($x=0$) to 1.4 eV (metallic regime $x=12.5\%$). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at ($π$/2,$π$/2) and less intense features at $X$ in the FS. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS and establishes the emergence of a two-dimensional metallic state formed by conducting Rh-planes intercalated by insulating Ir-planes. Finally, our data indicate that hole doping causes a flipping of the in-plane net ferromagnetic moment in the Rh plane and induces a magnetic transition from the AF-I to the AF-II ordering.

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