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arXiv 1603.04815physics.opticsastro-ph.IMcond-mat.mtrl-sci
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低应力氧化硅的红外介电性能

Infrared dielectric properties of low-stress silicon oxide

Giuseppe Cataldo, Edward J. Wollack, Ari D. Brown, Kevin H. Miller

摘要:

氧化硅薄膜在光学薄膜和高性能电子线路中起着重要的作用。在远红外和中红外制度的介电函数的估计来自于所观察到的透射光谱为一个常用的低应力氧化硅配方。实验,建模和数值方法用于提取介电函数。

英文摘要:

Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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