低应力氮化硅的红外介电性能
Infrared dielectric properties of low-stress silicon nitride
摘要：
氮化硅薄膜在传感器、滤波器和高性能电路中起着重要的作用。在远红外和中红外制度的介电函数的估计来自于所观察到的透射光谱为一个常用的低应力氮化硅配方。实验，建模和数值方法用于提取介电参数的精度约为4%。
英文摘要：
Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
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