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arXiv 2108.09381physics.opticsphysics.app-ph
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非互易 ENZ-电介质双层:在ε近零(ENZ)频率下由非线性透明导电氧化物薄膜增强非互易性

Nonreciprocal ENZ-Dielectric Bilayers: Enhancement of Nonreciprocity from a Nonlinear Transparent Conducting Oxide Thin Film at Epsilon-Near-Zero (ENZ) Frequency

Diego M. Solís, Nader Engheta

AI总结:

本文提出利用ITO薄膜在ENZ频率下的强非线性响应构建硅光子双层非互易器件,通过数值模拟确定最佳工作点和最大非互易透射比上限略高于2。

摘要:

我们设想将氧化铟锡(ITO)薄膜作为双层硅光子亚波长器件的一部分,以增强非线性辅助的全无源非互易行为。在ε近零(ENZ)频率附近,对模式进行非对称p偏振斜入射激发,该模式具有高度受限且增强的法向电场分量和较大吸收,从而能够利用ITO的强超快非线性响应,在双端口元件中产生显著的非互易性能。尽管受到损耗限制,我们确定了器件的最佳工作点以及可达到的最大非互易透射比随光强的变化关系——包括一个略高于2的明显上限——并进行了详尽的数值模拟,考虑了非谐性和热性质的非线性过程,包括稳态和脉冲激光激发,验证了我们的预测。

英文摘要:

We envision the use of an indium tin oxide (ITO) thin film as part of a bi-layered silicon-photonics subwavelength device to boost nonlinearity-assisted all-passive nonreciprocal behavior. The asymmetric p-polarized oblique excitation of a mode near the epsilon-near-zero (ENZ) frequency, with highly-confined and enhanced normal electric field component and large absorption, allows to harness ITO's strong ultrafast nonlinear response for the generation of a notable nonreciprocal performance in the two-port element. Though limited by loss, we find the device's optimal operational point and the maximum nonreciprocal transmittance ratio attainable vs. light intensity -- including an apparent upper bound slightly over 2 --, and we perform exhaustive numerical simulations considering nonlinear processes of both anharmonic and thermal nature that validate our predictions, including steady-state and pulsed-laser excitations.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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