Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices
T. D. Dongale, K. V. Khot, S. V. Mohite, S. S. Khandagale, S. S. Shinde, A. V. Moholkar, K. Y. Rajpure, P. N. Bhosale, P. S. Patil, P. K. Gaikwad, R. K. Kamat
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.
Investigation of Forming Free Bipolar Resistive Switching Characteristics in Al/Mn3O4/FTO RRAM Device
利用Al（Aluminum）/Mn_3O_4/FTO（Fluorine doped Tin Oxide）阻变存储器（RRAM）器件在Mn_3O_4中实现了双极阻变（BRS）现象。所制备的RRAM器件表现出良好的保持性、非易失性和形成自由BRS。利用电流-电压特性和电阻温度特性研究了其导电机理和热激活能。高阻态（HRS）与低阻态（LRS）的电阻比约为102。所制备的RRAM器件在LRS态和HRS态表现出不同的导电机制，如欧姆导电和空间电荷限制导电（SCLC）。氧空位的导电丝（CF）的断裂和形成通过改变外部电压的极性而发生，这可能是所制造的RRAM器件中的电阻切换特性的原因。该制造的RRAM器件适合于在未来的高密度非易失性存储器（NVM）RRAM器件中的应用。
Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations
Impact of Switching Layer Architecture on Power Consumption in RRAM
Center for Materials Interfaces in Research and Applications, Northern Arizona University（北亚利桑那大学材料研究与应用界面中心）；School of Informatics, Computer, and Cyber Systems, Northern Arizona University（北亚利桑那大学信息、计算机与网络系统学院）
SiNx RRAMs performance with different stoichiometries
Institute of Nanoscience and Nanotechnology, NCSR “Demokritos”（纳米科学与纳米技术研究所，德谟克利特国家研究中心）；Department of Electrical and Computer Engineering, Democritus University of Thrace（色雷斯德谟克利特大学电气与计算机工程系）
