碳记忆评估

摘要：

在过去的50年里，硅CMOS集成电路技术的几何尺寸和性能扩展使得许多经济实惠的新产品能够用于商业和消费应用。认识到闪存将在未来10年左右接近其最终的物理扩展极限，全球电子研究界已开始积极寻找新的范式和技术，以扩展存储器技术的功能扩展。基于与闪存不同的切换和保持机制，已经出现了几种有前途的非易失性存储器概念，例如，STTRAM、RRAM、PCM以及最近的基于碳的电阻存储器，这是本文的主题。本文将通过回顾碳中的一些效应来介绍碳材料的不同领域，这些效应可用于产生具有潜在的高度可扩展性的原子尺寸的多次可切换的非易失性单极电阻存储器。碳基存储器是非易失性电阻存储器，因此，与ReRAM或PCRAM中相同的架构、电路、选择晶体管或二极管可以被认为是实现。碳记忆的最大优势可能是250 C的高温保持力，这使得它对汽车和恶劣条件具有吸引力。这是ITRS会议上新兴研究设备（ERD）的白皮书，新墨西哥州阿尔伯克基，2014年8月25日至26日。

英文摘要：

The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate physical scaling limits within the next 10 years or so, the global electronics research community has begun an intense search for a new paradigm and technology for extending the functional scaling of memory technologies. Several promising nonvolatile memory concepts have emerged, based on different switching and retention mechanisms from those of Flash memory, e.g., STTRAM, RRAM, PCM and more recently, resistive memories based on carbon, which are the topic of this paper. This paper will introduce into the diverse field of carbon materials by recollecting some effects in carbon that can be used to produce a multiple time switchable, non-volatile unipolar resistive memory with potential high scalability down to atomic dimensions. Carbon-based memory is a non-volatile resistive memory, therefore, the same architectures, circuits, select transistor or diodes like in ReRAM or PCRAM can be considered as implementation. The big advantage of carbon memory might be the high temperature retention of 250 C, which makes it attractive for automotive and harsh conditions. This is a white paper for the ITRS meeting on emerging research devices (ERD) in Albuquerque, New Mexico, on August 25-26, 2014.

机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。