忆阻器器件的关系型制备-建模数据库
A relational fabrication-to-modeling database for memristor devices
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中文总结 AI 辅助
针对忆阻器数据集稀缺问题，构建整合制备、表征与建模的关系型数据库，关联6190个器件与16万余实验，支持溯源查询与数据分析，助力忆阻器技术发展。
中文摘要 AI 辅助
阻变随机存取存储器（RRAM）器件，又称忆阻器，其性能高度依赖制备工艺、晶圆上的位置以及测量协议。然而，公开可用的大规模忆阻器数据集仍然稀缺，尤其是那些将实验元数据与电学测量相结合，并保留实验工作流程间明确关联的数据集。在此，我们提出一个基于氧化物忆阻器的自动化电学表征综合关系型数据库。该数据库将TiN/HfOx/TiN、Pt/TiOx/AlOy/Pt和Pt/TiOx/Pt三种堆叠结构中的6190个忆阻器器件，与161006个经过验证的实验以及超过1.69亿个电学点记录相关联。它整合了制备工艺、晶圆映射、电学表征和建模，以描述电形成、电流-电压非线性、存储窗口（R_off/R_on）、开关动力学和短期波动性。该资源以规范化且建立索引的SQLite数据库形式发布，附带模式文档、图形用户界面和经验建模示例，支持可溯源的查询、统计分析以及数据驱动的应用，以助力未来忆阻器技术的开发。
英文摘要
Resistive random access memory (RRAM) devices, also known as memristors, are highly dependent on fabrication, location on the wafer, and measurement protocols. However, openly available large-scale memristor datasets remain scarce, particularly those that combine experimental metadata with electrical measurements and preserve explicit links across the experimental workflow. Here, we present a comprehensive relational database of automated electrical characterization data from oxide-based memristors. The database links 6,190 memristor devices across TiN/HfOx/TiN, Pt/TiOx/AlOy/Pt, and Pt/TiOx/Pt stacks to 161,006 validated experiments and over 169 million electrical point records. It integrates fabrication, wafer mapping, electrical characterization, and modeling to describe electroforming, current-voltage non-linearity, memory windows (R_off/R_on), switching dynamics, and short-term volatility. Released as a normalized and indexed SQLite database with schema documentation, graphical user interfaces, and examples of empirical modeling, this resource supports provenance-aware querying, statistical analysis, and data-driven applications for the development of future memristor technologies.
发表机构
- Centre for Electronics Frontiers, School of Engineering, University of Edinburgh（爱丁堡大学工程学院前沿电子中心）
机构由 AI 辅助整理，请以论文原文为准。
