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arXiv 1602.01489cond-mat.mes-hall
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利用超导体/石墨烯/超导体结探测全范围邻近效应

Full range of proximity effect probed with Superconductor/Graphene/Superconductor junctions

Chuan Li, S. Guéron, A. Chepelianskii, H. Bouchiat

摘要:

石墨烯态密度的高度可调谐性使其成为不同区域量子输运的理想探针。特别地,可以流过连接到两个超导电极的非超导(N)材料的超电流关键地取决于N相对于超导相干长度的长度。使用石墨烯作为N材料,我们研究了从短到长的扩散结的超导邻近效应的全范围。通过组合具有不同接触和长度的几个S/石墨烯/S样品,并测量它们的栅极依赖临界电流($ I_c $)和正常状态电阻$ R_N $,我们将乘积$eR_NI_c$与相关能量、长结中的无扰能量和短结中的接触的超导能隙进行比较,超过无扰能量的三个数量级。实验的变化惊人地遵循一个普遍的规律,接近预测的邻近效应在长和短结制度,以及在交叉区域,从而揭示了不同的能量尺度的相互作用。数值系数的差异揭示了石墨烯和超导电极之间的界面势垒所起的关键作用,它减少了短结和长结中的超电流。令人惊讶的是,超电流的减少与栅极电压和电极的性质无关。一个减少诱导间隙和无源能量提取,揭示了在短结中的势垒中的停留时间所发挥的作用,和一个有效的增加扩散时间在长结。我们比较我们的结果Usadel方程和数值模拟,更好地再现实验与不完美的NS接口的理论预测。

英文摘要:

The high tunability of the density of states of graphene makes it an ideal probe of quantum transport in different regimes. In particular, the supercurrent that can flow through a non-superconducting (N) material connected to two superconducting electrodes, crucially depends on the lenghth of the N relative to the superconducting coherence length. Using graphene as the N material we have investigated the full range of the superconducting proximity effect, from short to long diffusive junctions. By combining several S/graphene/S samples with different contacts and lengths, and measuring their gate-dependent critical currents ($ I_c $) and normal state resistance $ R_N $, we compare the product $eR_NI_c$ to the relevant energies, the Thouless energy in long junctions and the superconducting gap of the contacts in short junctions, over three orders of magnitude of Thouless energy. The experimental variations strikingly follow a universal law, close to the predictions of the proximity effect both in the long and short junction regime, as well as in the crossover region, thereby revealing the interplay of the different energy scales. Differences in the numerical coefficients reveal the crucial role played by the interfacial barrier between graphene and the superconducting electrodes, which reduces the supercurrent in both short and long junctions. Surprisingly the reduction of supercurrent is independent of the gate voltage and of the nature of the electrodes. A reduced induced gap and Thouless energy are extracted, revealing the role played by the dwell time in the barrier in the short junction, and an effective increased diffusion time in the long junction. We compare our results to the theoretical predictions of Usadel equations and numerical simulations which better reproduce experiments with imperfect NS interfaces.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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