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arXiv 1602.01202cs.ITmath.IT
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电阻存储器的局部可编程代码

Locally rewritable codes for resistive memories

Yongjune Kim, Abhishek A. Sharma, Robert Mateescu, Seung-Hwan Song, Zvonimir Z. Bandic, James A. Bain, B. V. K. Vijaya Kumar

摘要:

我们提出了本地可修复代码(LWC)的电阻存储器的灵感来自本地可修复代码(LRC)的分布式存储系统。LRC的修复局部性的小值使得能够快速修复单个故障节点,因为故障节点中的丢失数据可以通过仅访问一小部分其他节点来恢复。通过使用重写局部性,LWC可以改善耐久极限和功耗,这是电阻存储器的主要挑战。指出了LRC和LWC的对偶性,指出现有的LRC施工方法可以应用于LWC的施工。

英文摘要:

We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost data in the failed node can be recovered by accessing only a small fraction of other nodes. By using rewriting locality, LWC can improve endurance limit and power consumption which are major challenges for resistive memories. We point out the duality between LRC and LWC, which indicates that existing construction methods of LRC can be applied to construct LWC.

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