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arXiv 1602.00754cond-mat.mes-hall
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锯齿形双层石墨烯带的电门控诱导带隙和增强的Seebeck效应

Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

Thanh-Tra Vu, Van-Truong Tran

摘要:

我们从理论上研究了边栅产生的横向电场和顶、背栅产生的纵向电场对锯齿形双层石墨烯带(Bernal堆叠)能带和输运性质的影响。使用原子紧束缚计算和格林函数的形式主义,我们证明了带隙打开时,任何一个领域的应用,甚至扩大的同时影响下的两个领域。有趣的是,尽管垂直电场被广泛用于控制双层石墨烯中的带隙,但在这里,我们表明,横向场在调制更大范围的带隙和保持良好的电导方面表现出更积极的作用。对于具有16条链线的锯齿形双层石墨烯带,Seebeck效应也被证明强烈增强了约13倍。这些结果可能会激发新的设计的双层石墨烯带使用电子门的设备。

英文摘要:

We theoretically investigate effect of a transverse electric field generated by side gates and a vertical electric field generated by top, back gates on energy bands and transport properties of zigzag bilayer graphene ribbons (Bernal stacking). Using atomistic Tight Binding calculations and Green function formalism we demonstrate that bandgap is opened when either field is applied and even enlarged under simultaneous influence of the two fields. Interestingly, although vertical electric fields are widely used to control bandgap in bilayer graphene, here we show that transverse fields exhibit more positive effect in terms of modulating a larger range of bandgap and retaining good electrical conductance. Seebeck effect is also demonstrated to be enhanced strongly about 13 times for a zigzag bilayer graphene ribbons with 16 chain lines. These results may motivate new designs of devices made of bilayer graphene ribbons using electric gates.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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