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arXiv 1510.04475cond-mat.str-el
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多轨道模型中的Mott跃迁和新序:结构“双交换”的相关性

Mott transitions and Novel Orders in Multi-Orbital Models: The Relevance of Structural "Double Exchange"

Mukul S. Laad, S. Koley, A. Taraphder

摘要:

在真正的过渡金属氧化物中,所谓的GdFeO 3八面体倾斜长期以来被认为是影响立方钙钛矿家族中发现的轨道和磁性有序状态范围的相关控制参数。它们在巡回和本地化之间的相互作用中的确切作用,长期以来一直被认为是d波段氧化物中的莫特内斯的基础,然而却很少受到关注。我们分析的相关性的GdFeO 3倾斜详细的部分填充的电子轨道系统中的一个代表性的设置。我们确定了一个新的广义原则,广泛的相关性,即这种倾斜的行为就像一个结构性的“双交换”和行为违反了著名的安德森-长谷川双交换。因此,作为这种倾斜的函数,从Mott-Hubbard绝缘体到非相干坏金属的相变作为有效带宽控制的Mott转变而发生。我们详细分析了非相干金属通过研究一个和两个粒子的光谱响应,并提出,这种选择性金属是一种新的轨道模拟的FL* 状态与分馏轨道。最后,我们应用这些想法定性地讨论了应变对合适衬底上的d-带氧化物薄膜的影响,并讨论了通过合适的应变工程在TMO薄膜中激发新的有序相,如非常规循环电流、向列相和超导体的可能性。

英文摘要:

In real transition-metal oxides, the so-called GdFeO3 octahedral tilt is long known to be a relevant control parameter influencing the range of orbital and magnetic ordered states found across families of cubic perovskite families. Their precise role in the interplay between itinerance and localisation, long known to underpin Mottness in d-band oxides, has however received much less attention. We analyse the relevance of the GdFeO3 tilt in detail in a representative setting of a partially-filled e g orbital system. We identify a new generalised principle of broad relevance, namely, that this tilt acts like a structural "double exchange" and acts contrary to the well-known Anderson-Hasegawa double exchange. As a function of this tilt, therefore, a phase transition from a Mott-Hubbard insulator to an incoherent bad-metal occurs as an effective band-width-controlled Mott transition. We analyse the incoherent metal in detail by studying one- and two-particle spectral responses and propose that this selective-metal is a novel orbital analogue of the FL* state with fractionalised orbitons. Finally, we apply these ideas to qualitatively discuss the effect of strain on thin films of such d-band oxides on suitable substrates, and discuss the exciting possibility of engineering novel ordered phases, such as unconventional circulating currents, nematics and superconductors, by suitable strain engineering in TMO thin films.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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