The Heisenberg-Kitaev (HK) model on the triangular lattice is conceptually interesting for its interplay of geometric and exchange frustration. HK models are also thought to capture the essential physics of the spin-orbital entanglement in effective $j=1/2$ Mott insulators studied in the context of various 5d transition metal oxides. Here we argue that the recently synthesized Ba$_3$IrTi$_2$O$_9$ is a prime candidate for a microscopic realization of the triangular HK model. We establish that an infinitesimal Kitaev exchange destabilizes the 120$^\circ$ order of the quantum Heisenberg model and results in the formation of an extended $\mathbb{Z}_2$-vortex crystal phase in the parameter regime most likely relevant to the real material. Using a combination of analytical and numerical techniques we map out the entire phase diagram of the model, which further includes various ordered phases as well as an extended nematic phase around the antiferromagnetic Kitaev point.
We investigate the Hubbard model on the anisotropic triangular lattice by means of the cellular dynamical mean field theory. The phase diagram determined in the Hubbard interaction versus temperature plane shows novel reentrant behavior in the Mott transition due to the competition between Fermi-liquid formation and magnetic correlations under geometrical frustration. We demonstrate that the reentrant behavior is characteristic of the Mott transition with intermediate geometrical frustration and indeed consistent with recent experimental results of organic materials.
The phase diagram of model Mott-insulator--band-insulator heterostructures is studied using the semiclassical approximation to the dynamical-mean-field method as a function of thickness, coupling constant, and charge confinement. An interface-stabilized ferromagnetic phase is found, allow the study of its competition and possible coexistence with the antiferromagnetic order characteristic of the bulk Mott insulator.
We study the interplay of strong electron correlations and intra-triangle spin exchange at two-thirds filling of the single-orbital Hubbard model on the decorated honeycomb lattice using rotationally invariant slave bosons. We find that the spin exchange tunes between a spin-$1$ Mott insulator, a metal, and a spin-$0$ Mott insulator when the exchange is antiferromagnetic. The Mott insulators occur from effective intra-triangle multi-orbital interactions and are adiabatically connected to the ground state of an isolated triangle. An antiferromagnetic spin exchange, as determined by the Goodenou…
In an attempt to clarify the nature of the crossover from a Peierls band insulator to a Mott Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein Hubbard model using exact diagonalization techniques.
We study electric transport near the Mott metal-insulator transition in a triangular-lattice Hubbard model at half filling. We calculate optical conductivity $σ(ω)$ based on a cellular dynamical mean field theory including vertex corrections inside the cluster. Near the Mott critical end point, a Drude analysis in the metallic region suggests that the change in the Drude weight is important rather than that in the transport scattering rate for the Mott transition. In the insulating region, there emerges an "ingap" peak in $σ(ω)$ at low $ω$ near the Mott transition, and this smoothly connects t…
We introduce a novel extension of the Gutzwiller variational wavefunction able to deal with insulators that escape any mean-field like description, as for instance non-magnetic insulators. As an application, we study the Mott transition from a paramagnetic metal into a non-magnetic Peierls, or valence-bond, Mott insulator. We analyze this model by means of our Gutzwiller wavefunction analytically in the limit of large coordination lattices, where we find that: (1) the Mott transition is first order; (2) the Peierls gap is large in the Mott insulator, although it is mainly contributed by the el…
An analysis of Luttinger's theorem shows that -- contrary to recent claims -- it is not valid for a generic Mott insulator. For a two-orbital Hubbard model with two electrons per site the crossover from a non-magnetic correlated insulating phase (Mott or Kondo insulator) to a band insulator is investigated. Mott insulating phases are characterized by poles of the self-energy and corresponding zeros in the Greens functions defining a ``Luttinger surface'' which is absent for band insulators. Nevertheless, the ground states of such insulators with two electrons per unit cell are adiabatically co…
We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects with the number of Mott insulating layers and with position in the heterostructure is determined, and the optical conductivity is computed. It is shown that the heterostructures are generally metallic, with moderately renormalized bands of quasiparticles appearing at the interface between the correlated and uncorrelated regions.
The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott insulator to band insulator. The model consists of two Hubbard systems connected by single particle hopping. The Hubbard Hamiltonian is solved by the Dynamical Mean-Field theory using Quantum Monte Carlo to solve the resulting quantum impurity problem. The quasiparticle spectral function is calculated. Here we focus on the optical conductivity and in particular on …
We employ dynamical mean field theory (DMFT) with a Quantum Monte Carlo (QMC) atomic solver to investigate the finite temperature Mott transition in the Hubbard model with the nearest neighbor hopping on a triangular lattice at half-filling. We estimate the value of the critical interaction to be $U_c=12.0 \pm 0.5$ in units of the hopping amplitude $t$ through the evolution of the magnetic moment, spectral function, internal energy and specific heat as the interaction $U$ and temperature $T$ are varied. This work also presents a comparison between DMFT and finite size determinant Quantum Monte…
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized Bernevig-Hughes-Zhang model that incorporates the Hubbard-like onsite Coulomb energy U in addition to the spin-orbit coupling term that causes band inversion. The topological and Mott insulating phases are realized by appropriately choosing smaller and larger values of U, respectively. As expected, the interface is found to be metallic because of the localized edge state. Wh…
1T-TaS$_2$ is a charge-density-wave (CDW) compound with a Mott-insulating ground state. The metallic state obtained by doping, substitution or pulsed charge injection is characterized by an emergent CDW domain wall network, while single domain walls can be found in the pristine Mott state. Here we study whether and how the single walls become metallic. Tunneling spectroscopy reveals partial suppression of the Mott gap and the presence of in-gap states strongly localized at the domain-wall sites. Using the real-space dynamical mean field theory description of the strongly correlated quantum-par…
We investigate properties of a topological Mott insulator in one dimension by examining the bulk topological invariant and the entanglement spectrum of a correlated electron model. We clarify how gapless edge states in a non-interacting topological band insulator evolve into spinon edge states in a topological Mott insulator. Furthermore, we propose a topological Mott transition, which is a new type of topological phase transition and never observed in free fermion systems. This unconventional transition occurs in spin liquid phases in the Mott insulator and is accompanied by zeros of the sing…
Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice, where the degree of frustration is varied between the unfrustrated case and the fully frustrated, isotropic triangular lattice. Upon increasing the DCA cluster size, we analyze the evolution of the MIT phase boundary as a function of frustration in the phase diagram spanned by the interaction strength and temperature, and provide a quantitative description of …
We investigate the magnetic properties and Mott transition in the Hubbard model for weakly coupled chains on the anisotropic triangular lattice. Taking into account 120$^\circ$ Néel, and collinear orderings, the magnetic phase diagram is studied at zero temperature and half-filling by the variational cluster approximation. We found that when the on-site Coulomb repulsion $U$ is relatively large, nonmagnetic insulator, which is a candidate of the spin liquid state, is realized for wide range of the interchain hopping from quasi two-dimensional to almost one-dimensional regime. When the intercha…
The Gutzwiller wave function for a strongly correlated model can, if supplemented with a long-range Jastrow factor, provide a proper variational description of Mott insulators, so far unavailable. We demonstrate this concept in the prototypical one-dimensional $t-t^\prime$ Hubbard model, where at half filling we reproduce all known phases, namely the ordinary Mott undimerized insulator with power-law spin correlations at small $t^\prime/t$, the spin-gapped metal above a critical $t^\prime/t$ and small $U$, and the dimerized Mott insulator at large repulsion.
We study Mott transition in the two-dimensional Hubbard model on an anisotropic triangular lattice. We use the Lanczos exact diagonalization of finite-size clusters up to eighteen sites, and calculate Drude weight, charge gap, double occupancy and spin structure factor. We average these physical quantities over twisted boundary conditions in order to reduce finite-size effects. We find a signature of the Mott transition in the dependence of the Drude weight and/or charge gap on the system size. We also examine the possibility of antiferromagnetic order from the spin structure factor. Combining…
In order to demonstrate that atomic Fermi gas is a good experimental reality in studying unsolved problems in frustrated interacting-spin systems, we numerically examine the Mott core state emerged by loading two-component atomic Fermi gases on triangular optical lattices. Consequently, we find that plateau like structures are observable in the Mott core polarization as a function of the population imbalance. These plateau states are caused by a flexibility that the surrounding metallic region absorbs the excess imbalance to keep the plateau states inside the Mott core. We also find spin patte…
We theoretically discover purely electronic polarization modes in THz frequency region in dimer Mott insulators $κ$-(BEDT-TTF)$_2$X. The unusual low-frequency modes arise from the coupling between the oscillation of intradimer electric dipole moments and that of alternating interdimer bond orders. These collective motions play an important role in the dynamical dielectric properties of the dimer Mott insulators. Near the phase boundary of the dimer Mott transition, the ferroelectric ground state is realized by introducing electron-lattice coupling.
Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts the transition is percolative and should exhibit Coulomb frustration.
We provide the first unbiased evidence for a higher-order topological Mott insulator in three dimensions by numerically exact quantum Monte Carlo simulations. This insulating phase is adiabatically connected to a third-order topological insulator in the noninteracting limit, which features gapless modes around the corners of the pyrochlore lattice and is characterized by a $\mathbb{Z}_{4}$ spin-Berry phase. The difference between the correlated and non-correlated topological phases is that in the former phase the gapless corner modes emerge only in spin excitations being Mott-like. We also sho…
We propose a novel quantum spin liquid state that can explain many of the intriguing experimental properties of the low-temperature phase of the organic spin liquid candidate materials. This state of paired fermionic spinons preserves all symmetries of the system, and it has a gapless excitation spectrum with quadratic bands that touch at momentum ~ k = 0. This quadratic band touching is protected by the symmetry of the system. Using variational Monte Carlo techniques, we show that this state has highly competitive energy in the triangular lattice Heisenberg model supplemented with a realistic…
We derive the phase diagram for the one-dimensional model of a ferroelectric perovskite recently introduced by Egami, Ishihara and Tachiki [Science, {\bf 261}, 1307 (1993)]. We show that the interplay between covalency, ionicity and strong correlations results in a spontaneously dimerized phase which separates the weak-coupling band insulator from the strong-coupling Mott insulator. The transition from the band insulator to the dimerized phase is identified as an Ising critical point. The charge gap vanishes at this single point with the optical conductivity diverging as $σ(ω)\sim ω^{-3/4}$. T…
We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattic…
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator transition. The hopping exponent $α$ shows a systematic evolution from a value of $α=1/2$ deeper in the insulator to the conventional Mott value $α=1/3$ closer to the transition. This behavior, which we argue to be a universal feature of disordered Mott systems close to the metal-insulator transition, is shown to reflect the gradual emergence of disorder-induc…
The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite temperatures. We first benchmark its predictions against state-of-the-art quantum Monte Carlo simulations, demonstrating quantitative agreement. Qualitatively, the short-ranged spin fluctuations both induce holon-doublon bound states and renormalize the charge sector to form the Hubbard bands. The Mott gap is understood as the charge gap renormalized downwards by thes…
We report structural studies of the spin-orbit Mott insulator family K$_x$Ir$_y$O$_2$, with triangular layers of edge-sharing IrO$_6$ octahedra bonded by potassium ions. The potassium content acts as a chemical tuning parameter to control the amount of charge in the Ir-O layers. Unlike the isostructural families with Ir replaced by Co or Rh ($y=1$), which are metallic over a range of potassium compositions $x$, we instead find insulating behaviour with charge neutrality achieved via iridium vacancies, which order in a honeycomb supercell above a critical composition $x_c$. By performing densit…
The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.
We point out and explicitly demonstrate a close connection that exists between featureless Mott insulators and fractional quantum Hall liquids. Using magnetic Wannier states as the single-particle basis in the lowest Landau level (LLL), we demonstrate that the Hamiltonian of interacting bosons in the LLL maps onto a Hamiltonian of a featureless Mott insulator on triangular lattice, formed by the magnetic Wannier states. The Hamiltonian is remarkably simple and consists only of short-range repulsion and ring-exchange terms.
We study the topological properties of Bose-Mott insulators in one-dimensional non-Hermitian superlattices, which may serve as effective Hamiltonians for cold atomic optical systems with either two-body loss or one-body loss. We find that in the strongly repulsive limit, the Mott insulator states of the Bose-Hubbard model with a finite two-body loss under integer fillings are topological insulators characterized by a finite charge gap, nonzero integer Chern numbers, and nontrivial edge modes in a low-energy excitation spectrum under an open boundary condition. The two-body loss suppressed by t…
We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized mid-gap states inside the MI region, which still have a remnant of the helical energy-spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling $V$, largely enhances the electron mass inside the MI and also splits a single Dirac-cone at edge sites into the spatially-separated two Dirac-cones in t…
A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric fields arising from the La$^{3+}$/Sr$^{2+}$ charge difference and the carriers are treated within a Hartree approximation; and the on-site interactions are treated by unrestricted Hartree-Fock. The phase diagram as a function of interaction strength and layer number is determined and predictions are made for optical conductivity experiments. A note worthy fi…
We consider a heterostructure of a metal and a paramagnetic Mott insulator using an adaptation of dynamical mean field theory to describe inhomogeneous systems. The metal can penetrate into the insulator via the Kondo effect. We investigate the scaling properties of the metal-insulator interface close to the critical point of the Mott insulator. At criticality, the quasiparticle weight decays as 1/x^2 with distance x from the metal within our mean field theory. Our numerical results (using the numerical renormalization group as an impurity solver) show that the prefactor of this power law is e…
This is a summary of a central argument in recent review articles by the author (cond-mat/0109419, cond-mat/0211005, and cond-mat/0211027). An effective field theory is derived for the low energy spin singlet excitations in a paramagnetic Mott insulator with collinear spin correlations.
The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator is driven by a combination of charge transfer effects and enhanced correlation effects. Approaching a Mott insulating phase from the metallic side, we show that a dead layer forms at the surface of the solid, where quasiparticle amplitudes are exponentially suppressed. Surface correlation and charge transfer effects can be strongly impacted by changes of th…
We examine recombination processes of photocarriers in one-dimensional Mott insulators coupled to phonons. Performing density matrix renormalization group calculations, we find that, even for small electron-phonon coupling, many phonons are generated dynamically, which cause initial relaxation process after the irradiation. At the same time, spin-charge coupling coming from mixing of high- and low-energy states by the irradiation is suppressed. We discuss differences between Mott and band insulators in terms of relaxation dynamics.
It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two dimensions and lower, the smallest amount of disorder destabilizes the metal. The nature of the metal-insulator transition in an interacting system remains unresolved. Here we explore the effect of disorder on a strongly correlated Mott insulator without changing the carrier concentration. Angle resolved photoemission spectroscopy (ARPES) measurements on copper inte…
The ground state of Sn/Si(111) and Sn/Ge(111) surface $α$-phases is reexamined theoretically, based on $ab-initio$ calculations where correlations are approximately included through the orbital dependence of the Coulomb interaction (in the local density + Hubbard U approximation). The effect of correlations is to destabilize the vertical buckling in Sn/Ge(111) and to make the surface magnetic, with a metal-insulator transition for both systems. This signals the onset of a stable narrow gap Mott-Hubbard insulating state, in agreement with very recent experiments. Antiferromagnetic exchange is p…
Motivated by recent experiments on the quantum-spin-liquid candidate material LiZn2Mo3O8, we study a single-band extended Hubbard model on an anisotropic Kagome lattice with the 1/6 electron filling. Due to the partial filling of the lattice, the inter-site repulsive interaction is necessary to generate Mott insulators, where electrons are localized in clusters, rather than at lattice sites. It is shown that these cluster Mott insulators are generally U(1) quantum spin liquids with spinon Fermi surfaces. The nature of charge excitations in cluster Mott insulators can be quite different from co…
Motivated by recent experiments on the quantum-spin-liquid candidate material LiZn2Mo3O8, we study a single-band extended Hubbard model on an anisotropic Kagome lattice with the 1/6 electron filling. Due to the partial filling of the lattice, the inter-site repulsive interaction is necessary to generate Mott insulators, where electrons are localized in clusters, rather than at lattice sites. We provide examples of such cluster Mott insulators and study the phase transitions between metallic states and cluster Mott insulators on an anisotropic Kagome lattice. It is shown that these cluster Mott…
Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.
We study the low energy behavior of the one dimensional Hubbard model across the Mott metal-insulator phase transition in an external magnetic field. In particular we calculate elements of the dressed charge matrix at the critical point of the Mott transition for arbitrary Hubbard repulsion and magnetization numerically and, in certain limiting cases, analytically. These results are combined with a non-perturbative effective field theory approach to reveal how the breaking of time reversal symmetry influences the Mott transition.
The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than half-century of intense research efforts. Well-developed momentum-resolved spectroscopies such as photoemission or neutron scattering cannot probe the full Mott gap. We report observation of dispersive charge excitations across the Mott gap in a high Tc parent cuprate Ca2CuO2Cl2 using high resolution resonant inelastic x-ray scattering shedding light on the anisotropy of Mott-gap. The results provide direct support for the Hubbard model to describe charge excitations across the Mot…
Ultrafast laser pulses can redistribute charges in Mott insulators on extremely short time scales, leading to the fast generation of photocarriers. It has recently been demonstrated that these photocarriers can form a novel $η$--paired condensate at low temperatures, featuring a staggered superconducting pairing field. In this conference paper, we discuss the origin of the $η$--paired hidden phase and its optical response which may be detected in a pump-probe experiment. The hidden phase may be relevant for possible light-induced superconductivity in Mott insulators.
We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes further- more opens new relaxation channels and significantly speeds up the thermalization process. We also consider the effect of the energy distribution of the doped carriers on the screening.
We investigate how the antiferromagnetic Mott insulator evolves into the d-wave BCS superconductor through hole doping. Allowing spin fluctuations in the strong coupling approach, we find a spin-gapped incoherent metal with preformed pairing as an intermediate phase between the antiferromagnetic Mott insulator and d-wave superconductor. This non-Fermi liquid metal is identified with an infrared stable fixed point in the spin-decomposition gauge theory, analogous to the spin liquid insulator in the slave-boson gauge theory. We consider the single particle spectrum and dynamical spin susceptibil…
Employing extensive cellular dynamical mean-field theory (CDMFT) calculations with exact diagonalization impurity solver, we investigate the ground state phase diagrams and non-magnetic metal-insulator transitions of the half-filled Hubbard model on two plaquette -- the 1/5 depleted and checkerboard -- square lattices. We identify three different insulators in the phase diagrams: dimer insulator, antiferromagnetic insulator, and plaquette insulator. And we demonstrate that the plaquette insulator is a novel fragile Mott insulator (FMI) which features a nontrivial one-dimensional irreducible re…
Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between the thermodynamically coexisting metal and Mott insulator. We show how to model the required slab geometry and extract the electronic spectra. We construct an effective Landau free energy and compute the variation of its parameters across the phase diagram. Finally, using a linear mixture of the density and double-occupancy, we identify a natural Ising order parameter which unifies the treatment of the bandwidth and filling controlled Mott transitions.
We derived a simple metal-insulator criterion in analytical form for the doped Mott-Hubbard materials. Its readings closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase points to the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning the result is similar to Wilsons criterion in the itinerant electron systems. An application of the criterion to the high-Tc cuprates discussed.
We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical mean-field theory, we confirm that the topological edge state penetrating into the MI region induces a heavy-fermion like mid-gap state. We further elucidate the nature of the spatially-modulated quasi-particle weight of the mid-gap state, and discuss the effects of local correlation in the TI region. The optical conductivity and the Drude weight are also c…
Motivated by recent progress in the realization of artificial gauge fields and $SU(N)$ Mott insulators using alkaline-earth-like atoms in optical lattices, we develop an unbiased $SU(N)$ real-space dynamical mean-field theory (DMFT) approach to study the effect of spin-orbit coupling and onsite Hubbard interaction $U$ on $SU(3)$ fermionic systems. We investigate the behavior of the local magnetization, double occupancies, and the triple occupancy versus the Hubbard interaction across the metal to Mott insulator transition. We map out the magnetic phase diagram in the large-$U$ limit and show t…
We consider quantum phase transitions out of topological Mott insulators in which the ground state of the fractionalized excitations (fermionic spinons) is topologically non-trivial. The spinons in topological Mott insulators are coupled to an emergent compact U(1) gauge field with a so-called "axion" term. We study the confinement transitions from the topological Mott insulator to broken symmetry phases, which may occur via the condensation of dyons. Dyons carry both "electric" and "magnetic" charges, and arise naturally in this system because the monopoles of the emergent U(1) gauge theory a…
We propose a phenomenological understanding of the recently discovered weak Mott insulator in the moiré superlattice of twisted bilayer graphene, especially the emergent superconductivity at low temperature within the weak Mott insulator phase, namely while lowering temperature, the longitudinal resistivity first grows below temperature $T_m$, but then rapidly drops to zero at even lower temperature $T_c$. An emergent superconductor in an insulator phase is very unusual. Here we propose that this phenomenon is due to the pure two-dimensional nature of the bilayer graphene moiré superlattice. W…
We present an effective dipolar-spin model based on the strong coupling analysis, which may explain the possible origin of the "spin liquid Mott insulator". The issue is related to the dimer Mott insulator reminiscent of the organic triangular lattice system, $κ$-ET$_2$Cu$_2$(CN)$_3$, whose gapless spin liquid state had been discussed in the context of geometrical frustration of exchange coupling, $J$, between spins on dimer orbitals. It turns out that another degrees of freedom within the insulator, {\it quantum electric-dipoles} on dimers, interacts with each other by the Coulomb interaction…
Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound $κ$-H$_3$(Cat-EDT-TTF)$_2$. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice with $t^\prime/t \simeq 1.5$, where $t'$ is the minority hopping. It thus becomes important to extend previous studies, that were performed in the range $0 \leq t'/t \leq 1.2$, to find out whether there is a regime where Mott insulating behavior can be found without long-range magnetic order. To this end, we study the above model in the range $1.2 \leq t'/t \leq …
