This paper derives Langevin equations for an optical cavity where the dominant nonlinearity arises from free-carrier dispersion. We define a generalized Wigner function, compute a Fokker-Planck equation that approximates the master equation, and convert this to a system of stochastic differential equations. These equations are similar to the Wigner equations for an optical Kerr cavity, but have additional noise terms due to the incoherent carrier excitation and decay processes. We use these equations to simulate a phase-sensitive amplifier and latch and compare the results to a Kerr model.
Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly resonant nanocavities with low mode volume and large quality factor by localized defects in a photonic crystal structure. We build on thi…
High-mobility graphene hosting massless charge carriers with linear dispersion provides a promising platform for electron optics phenomena. Inspired by the physics of dielectric optical micro-cavities where the photon emission characteristics can be efficiently tuned via the cavity shape, we study corresponding mechanisms for trapped Dirac fermionic resonant states in deformed micro-disk graphene billiards and directed emission from those. In such graphene devices a back-gate voltage provides an additional tunable parameter to mimic different effective refractive indices and thereby the corres…
State-of-the-art optical oscillators employing cryogenic reference cavities are limited in performance by the Brownian thermal noise associated with the mechanical dissipation of the mirror coatings. Recently, crystalline Al$_{1-x}$Ga$_{x}$As/GaAs coatings have emerged as a promising candidate for improved coating thermal noise. We present measurements of the frequency noise of two fully crystalline cryogenic reference cavities with Al$_{0.92}$Ga$_{0.08}$As/GaAs optical coatings. We report on previously unmeasured birefringent noise associated with anti-correlated frequency fluctuations betwee…
Reduced Optical Gain Threshold by Carrier Multiplication in Semiconductor Perovskite Nanocrystals
National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University（南京大学固体微结构物理国家重点实验室、物理学院和先进微结构协同创新中心）；College of Engineering and Applied Sciences, and MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, Nanjing University（南京大学工程与应用科学学院和智能光学传感与操控教育部重点实验室）
In the majority of optomechanical experiments, the interaction between light and mechanical motion is mediated by radiation pressure, which arises from momentum transfer of reflecting photons. This is an inherently weak interaction, and optically generated carriers in semiconductors have been predicted to be the mediator of different and potentially much stronger forces. Here we demonstrate optomechanical forces induced by electron-hole pairs in coupled quantum wells embedded into a free-free nanomembrane. We identify contributions from the deformation-potential and piezoelectric coupling and …
The interplay between the illuminated excitation of carriers and subsequent thermalization and recombination leads to the formation of non-equilibrium distributions for the "hot" carriers and to heating of both electrons, holes and phonons. In spite of the fundamental and practical importance of these processes, there is no theoretical framework which encompasses all of them and provides a clear prediction for the non-equilibrium carrier distributions. Here, a self-consistent theory accounting for the interplay between excitation, thermalization, and recombination in continuously-illuminated s…
The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of optoelectronic devices such as solar cells because it does not generate electron-hole pairs. In this work, we develop a first-principles theory of free-carrier absorption taking into account both single-particle excitations and the collective Drude term, and we demonstrate its application to the case of doped Si. We determine the free-carrier absorption coefficient as…
Frequency combs have become a prominent research area in optics. Of particular interest as integrated comb technology are chip-scale sources, such as semiconductor lasers and microresonators, which consist of resonators embedding a nonlinear medium either with or without population inversion. Such active and passive cavities were so far treated distinctly. Here we propose a formal unification by introducing a general equation that describes both types of cavities. The equation also captures the physics of a hybrid device - a semiconductor ring laser with an external optical drive - in which we…
Direct Spatiotemporal Imaging of Charge Carrier Dynamics in Operative Semiconductor Devices
CNR IMM, Institute for Microelectronics and Microsystems（意大利国家研究委员会微电子与微系统研究所）；Institute of Physics, Charles University（查理大学物理研究所）；CNR NANOTEC, Institute of Nanotechnology（意大利国家研究委员会纳米技术研究所）
Statistics and dynamics of 2D rogue waves in a broad-area semiconductor laser with an intracavity saturable absorber are numerically investigated under the effect of transverse carrier diffusion. We show that lateral diffusion of carriers alters the statistics of rogue waves by enhancing their formation in smaller ratios of carrier lifetimes in the active and passive materials while suppressing them when the ratio is larger. Temporal dynamics of the emitted rogue waves is also studied and shown that finite nonzero transverse carrier diffusion coefficient gives them a longer duration. To furthe…
We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such…
