半导体层中载流子动量弛豫时间的探讨
Probing the momentum relaxation time of charge carriers in ultrathin semiconductor layers
摘要：
本文报道了一种测量半导体层中载流子动量弛豫时间的太赫兹时域技术。相敏调制技术直接提供弛豫时间。时间分辨的太赫兹实验进行n掺杂GaAs和显示精确的协议与电气特性得到的数据。该技术非常适合于研究诸如载流子的有效质量或载流子密度之类的参数先验未知的新型材料。
英文摘要：
We report on a terahertz time-domain technique for measuring the momentum relaxation time of charge carriers in ultrathin semiconductor layers. The phase sensitive modulation technique directly provides the relaxation time. Time-resolved THz experiments were performed on n-doped GaAs and show precise agreement with data obtained by electrical characterization. The technique is well suited for studying novel materials where parameters such as the charge carriers' effective mass or the carrier density are not known a priori.
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