AI 中文总结
研究电荷载流子动力学成像难题，引入普克尔斯成像法的载流子动力学（CDPI），它能直接获取内部电荷动力学，建立载流子输运统一图景，洞察基本机制及时空演变，适用于多种材料，为关联载流子动力学与器件功能提供新范例。
AI 中文摘要
理解电子器件内的电荷载流子动力学至关重要，因为它控制着信号的内部演变和外部可测量电流。然而，这些动力学的直接成像仍然难以实现：现有方法通常是间接的或固有地具有微扰性。在此，我们引入了普克尔斯成像法的载流子动力学（CDPI），这是一种灵敏、定量且非侵入性的方法，能直接获取内部电荷动力学。通过探测局部电场，CDPI在实空间中可视化光生电子云，同时将其演变与传导电流和位移电流相关联，从而建立起载流子输运的统一图景。该技术能直接洞察包括漂移、扩散、载流子 - 载流子相互作用、俘获和去俘获等基本机制以及载流子云形态的时空演变。在具有微米级空间分辨率和纳秒级时间分辨率的碲化镉辐射探测器中得到验证，CDPI广泛适用于表现出明显电光响应的系统。除了传统半导体，该方法还扩展到有机、钙钛矿和二维光电子材料，为直接将内部载流子动力学与器件级功能联系起来提供了新范例。
英文摘要
Understanding charge carrier dynamics within electronic devices is crucial, as it governs both the internal evolution of signals and the externally measurable current. Yet, direct imaging of these dynamics remains elusive: existing approaches are often indirect or inherently perturbative. Here, we introduce Carrier Dynamics by Pockels Imaging (CDPI), a sensitive, quantitative, and non-invasive method that enables direct access to internal charge dynamics. By probing the local electric field, CDPI visualizes photogenerated electron clouds in real space while simultaneously correlating their evolution with both conduction and displacement currents, thereby establishing a unified picture of carrier transport. The technique provides direct insight into fundamental mechanisms \textemdash including drift, diffusion, carrier-carrier interactions, trapping and detrapping \textemdash as well as the spatiotemporal evolution of carrier cloud morphology. Demonstrated in CdTe radiation detectors with micrometre-scale spatial resolution and nanosecond temporal resolution, CDPI is broadly applicable to systems exhibiting appreciable electro-optic responses. Beyond conventional semiconductors, the approach extends to organic, perovskite, and two-dimensional optoelectronic materials, offering a new paradigm for directly linking internal carrier dynamics to device-level functionality.
Commentsmain+SI, 17+7 pages, 5+3 figures, 4 videos
