高欧姆硅中电子和空穴漂移速度的测量<100>
Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon
摘要：
本文测量了高纯n型和p型取向硅中电子和空穴的漂移速度随电场和温度的变化<100>。测量范围包括电场值在2.5和50 kV/cm之间，温度在233和333 K之间。对于电子和空穴，我们的<100>结果与<111>文献中的漂移速度之间的差异超过15%，文献中的漂移速度也经常用于模拟<100>传感器。对于电子，结果<100>与先前的测量结果一致<100>，然而，对于空穴，对于10 kV/cm以上的场，观察到5%至15%之间的差异。结合我们的研究结果与发表的低场迁移率的数据，我们推导出参数化的漂移速度在高欧姆<100>硅的电子和空穴之间的字段0和50 kV/cm，和温度之间的233和333 K。此外，新的参数化的漂移速度的电子和空穴，这提供了更好的描述现有的数据硅<111>，比标准的参数化。
英文摘要：
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> orientation are presented. The measurements cover electric field values between 2.5 and 50 kV/cm and temperatures between 233 and 333 K. For both electrons and holes differences of more than 15 % are found between our <100> results and the <111> drift velocities from literature, which are frequently also used for simulating <100> sensors. For electrons, the <100> results agree with previous <100> measurements, however, for holes differences between 5 to 15 % are observed for fields above 10 kV/cm. Combining our results with published data of low-field mobilities, we derive parametrizations of the drift velocities in high-ohmic <100> silicon for electrons and holes for fields between 0 and 50 kV/cm, and temperatures between 233 and 333 K. In addition, new parametrizations for the drift velocities for electrons and holes are introduced, which provide somewhat better descriptions of existing data for <111> silicon, than the standard parametrization.
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