Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coefficients 200 - 300 $μ$V/K in its cubic crystalline phase ($\it{c}$-GST) at remarkably high $\it{p}$-type doping levels of $\sim$ 1$\times$10$^{19}$ - 6$\times$10$^{19}$ cm$^{-3}$ at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coefficient was found to exceed 200 $μ$V/K for a doping range 1$\times$10$^{19}$ - 3.5$\times$10$^{19}$ cm$^{-3}$. Given that the lattice thermal conductivity in this phase has already been measured to be extremely low ($\sim$ 0.7 W/m-K at 300 K),\citep{r51} our results suggest the possibility of using $\it{c}$-GST as a low-temperature thermoelectric material.
Covalent-organic frameworks (COFs) are intriguing platforms for designing functional molecular materials. Here, we present a computational study based on van der Waals dispersion-corrected hybrid density functional theory calculations to analyze the material properties of boroxine-linked and triazine-linked intercalated-COFs. The effect of Fe atoms on the electronic band structures near the Fermi energy level of the intercalated-COFs have been investigated. The density of states (DOSs) computations have been performed to analyze the material properties of these kind of intercalated-COFs. We pr…
The anomalous Nernst effect (ANE), a heat-charge conversion mechanism based on a magnetic metal, has been extensively studied for application in thin thermoelectric devices. The low magnetization and fabrication at room temperature are important for flexible ANE thermoelectric devices on plastic substrates. Therefore, we investigated the ANE in ferrimagnetic GdxFe100-x films with low magnetization in this study by systematically varying the Gd composition x. Although the Gd33Fe67 film with a Gd composition close to magnetic compensation composition exhibited very low magnetization, an ANE coef…
Loosely packed granular materials are intensively studied nowadays. Electrical and thermal transport properties should reflect the granular structure as well as intrinsic properties. We have compacted crystalline $CaAl$ based metallic grains and studied the electrical resistivity and the thermoelectric power as a function of temperature ($T$) from 15 to 300K. Both properties show three regimes as a function of temperature. It should be pointed out : (i) The electrical resistivity continuously decreases between 15 and 235 K (ii) with various dependences, e.g. $\simeq$ $T^{-3/4}$ at low $T$, whi…
We screened six cobalt-based 18-VEC systems CoVSi, CoNbSi, CoTaSi (Si-group) and CoVGe, CoNbGe, CoTaGe (Ge-group) by the first-principles approach, with the motivation of stabilizing these orthorhombic phases into the cubic symmetry -- favorable for thermoelectrics. Remarkably, it was found that the Ge-group is energetically more favorable in the cubic symmetry than the hitherto orthorhombic phase. We account the cubic ground state of the Si-group to the interplay of internal pressure and covalent interactions. The principle of covalent interactions will provide an insight and could be vital i…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial to nontrivial topological phase transition. To understand how the properties critical to thermoelectric efficiency are affected by the band inversion, we measured the broadband optical response of Pb$_{0.77}$Sn$_{0.23}$Se as a function of temperature. We find clear optical evidence of the band inversion at $160\pm15$ K, and use the extended Drude model to a…
Solid-state precipitation can be used to tailor materials properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, we uncover unconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local co-melting of Bi and Ge during sintering, enabling an amorphous-like lattice t…
We investigate the electrical conductivity and thermoelectric effects in topological crystalline insulators in the presence of short- and long-range impurity interactions. We employ the generalized Boltzmann formalism for anisotropic Fermi surface systems. The conductivity exhibits a local minimum as doping varies owing to the Van Hove singularity in the density of states originated from the saddle point in the surface states band structure. Suppression of the interband scattering of the charge carriers at high-energy Dirac points results in a maximum in the electrical conductivity. Whenever t…
We report ab-initio calculations of the stability, lattice dynamics, electronic and thermoelectric properties of cubic La3-yX4 (X=S,Se,Te) materials in view of analyzing their potential for thermoelectric applications. The lanthanum motions are strongly coupled to the tellurium motions in the telluride, whereas the motions of both types of atoms are decoupled in the sulfides. Nevertheless, this has no impact on their thermal properties because experimentally all compounds have low thermal conductivity. We believe that this is due to Umklapp scattering of the acoustical modes, notably by the lo…
In principle thermoelectricity is a viable route of converting waste heat into electricity, but the commercialization of the technology is limited by its present efficiency. In quest of improved materials, utilizing an \textit{ab initio} approach, we report polytypism induced improved thermoelectric performance in Li based Nowotny-Juza phases LiZn\textit{X} (\textit{X} = N, P, As, Sb, and Bi). In addition to LiZnSb, we find that cubic LiZnBi is energetically more favorable than the hitherto explored hexagonal phase whereas the hexagonal polytypes of cubic LiZnP, and LiZnAs are likely to be sta…
Transition metal oxide thin films show versatile electrical, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of the magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO3 thin films using pulsed laser epitaxy. Using epitaxial stabilization technique with atomically flat polycrystalline SrTiO3 substrate, epitaxial polycrystalline SrRuO3 thin film with crystalline quality of each grain comparable to that of single-c…
We report on the high-temperature (350 K <T< 1000 K) thermoelectric properties of the ternary compounds LuNiSb (cubic) and LuNiSn (orthorhombic) and a composite material (LuNiSb)$_{0.5}$(LuNiSn)$_{0.5}$. The electrical conductivity in LuNiSn is metallic, while it is semiconducting-like in LuNiSb. The Seebeck coefficient reaches -5.5 $μ$V/K at 700 K for the former compound and 66 $μ$V/K at 607 K for the latter one. The composite sample (LuNiSb)$_{0.5}$(LuNiSn)$_{0.5}$ constructed from orthorhombic matrix with cubic inclusions combines the electrical conductivity of LuNiSn with the thermoelectri…
SnTe, an archetypical topological crystalline insulator, often shows a transition from a highly symmetric cubic phase to a rhombohedral structure at low temperatures. In order to achieve the highly symmetric cubic phase at low temperatures suitable for quantum behaviour, we have employed the modified Bridgman method to grow a high-quality single-crystalline sample of SnTe. Analysis of the crystal structure using Laue diffraction and rocking curve measurements show a very high degree of single crystallinity of the sample. Resistivity and the specific heat data do not show the signature of struc…
Hierarchically nanostructured materials, where disorder is introduced in various length scales (at the atomic scale, the nanoscale, and the mesoscale) is one of the most promising directions to achieve extremely low thermal conductivities and improve thermoelectric performance. Here we theoretically investigate one such system, a nanocrystalline material with nanopores that are introduced between the crystalline regions. We use the Nonequilibrium Greens Function method for electronic transport and Molecular Dynamics for phonon transport.
We perform a comparative study on thermoelectric performance of antiperovskite oxides $Ae_3Tt$O and nitrides $Ae_3Pn$N ($Ae=$ Ca, Sr, Ba; $Tt=$ Ge, Sn, Pb; $Pn=$ As, Sb, Bi) by means of first-principles calculation. As for the oxides with the cubic structure, Ca$_3$GeO with a sizable band gap exhibits high thermoelectric performance at high temperatures, while Ba$_3$PbO with Dirac cones without the gap is favorable at low temperatures. The latter high performance owes to high valley degeneracy including the multiple Dirac cones and the valleys near the $Γ$ and R points. For the nitrides with t…
The current state-of-the-art thermoelectric materials are generally composed of expensive, scarce, and toxic elements. In this respect, copper-based sulfide compounds have emerged as viable alternatives. Herein, we report for the first time the successful synthesis of single-phase cubic isocubanite CuFe2S3 using mechanical-alloying combined with microwave-assisted synthesis. The isocubanite phase synthesized via this ultra-fast out-of-equilibrium process exhibits a maximum thermoelectric figure of merit, zTmax ~ 0.14 at 673 K. Besides the thermoelectric properties, insights about the structure…
Magnesium nickel hydride films have earlier been suggested for several optoelectronic applications, but the optical properties and band gap have not been firmly established. In this work, the dielectric functions and the optical band gaps of thin films of Mg2NiH4 have been determined experimentally from optical modeling using spectroscopic ellipsometry and spectrophotometry in the photon energy range between 0.7 and 4.2 eV. Samples were prepared by reactive sputtering, resulting in a single-layer geometry that could easily be studied by ellipsometry. Crystalline samples were prepared by anneal…
We report a strategy based on introduction of point defects for improving the thermoelectric properties of FeSb2, a promising candidate for low temperature applications. Introduction of Sb deficiency to the tune of 20% leads to enhancement in the values of electrical conductivity (σ) and Seebeck coefficient (S) accompanied with a concomitant suppression in lattice thermal conductivity (\k{appa}lat) values in samples prepared using conventional solid state reaction route. These observations in polycrystalline FeSb2-x provides ample motivation for a dedicated exploration of thermoelectric behavi…
Systematic enumeration of crystalline networks with some special topological characters is of considerable interest in both mathematics and crystallography. Based on the restriction of lattice in cubic and inequivalent nodes not exceeding three, a simple method is proposed for systematic searching for three-dimensional crystalline networks with only sp2-configuration nodes (C-sp2-TDTCNs). We systematically scan the cubic space groups from No.195 to No.230 and find many C-sp2-TDTCNs including all the previously proposed cubic ones. These C-sp2-TDTCNs are topologically intriguing and can be cons…
The electronic Seebeck response in a conductor involves the energy-dependent mean free path of the charge carriers and is affected by crystal structure, scattering from boundaries and defects, and strain. Previous photothermoelectric (PTE) studies have suggested that the thermoelectric properties of polycrystalline metal nanowires are related to grain structure, though direct evidence linking crystal microstructure to the PTE response is difficult to elucidate. Here, we show that room temperature scanning PTE measurements are sensitive probes that can detect subtle changes in the local Seebeck…
The quest to improve the thermoelectric figure of merit has mainly followed the roadmap of lowering the thermal conductivity while keeping unaltered the power factor of the material. Ideally an electron-crystal phonon-glass system is desired. In this work, we report an extraordinary reduction of the cross-plane thermal conductivity in crystalline (TiNiSn):(HfNiSn) half-Heusler superlattices. We create SLs with thermal conductivities below the effective amorphous limit, which is kept in a large temperature range (120-300 K). We measured thermal conductivity at room temperature values as low as …
Effect of Pb doping on the crystallization process and thermoelectric properties of Ge2Sb2Te5 phase change material
A.B. Nalbandyan Institute of Chemical Physics NAS RA（纳尔班扬化学物理研究所）；Belgorod State University（别尔哥罗德国立大学）；Institute of Radiophysics and Electronics NAS RA（无线电物理与电子研究所）
Thermodynamic Phase Stability, Structural, Mechanical, Optoelectronic, and Thermoelectric Properties of the III-V Semiconductor AlSb for Energy Conversion Applications
S.U. Umarov Physical-Technical Institute of NAST（纳兹尔科学院苏·乌马尔物理技术研究所）；School of Optoelectronic Engineering & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications（重庆邮电大学光电工程学院与CQUPT-BUL创新学院）
Optoelectronic and Thermoelectric Properties of High-Performance AlSb Semiconductors
S.U. Umarov Physical-Technical Institute of NAST（S.U. 乌马罗夫物理技术研究所 (NAST)）；School of Optoelectronic Engineering & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications（重庆邮电大学光电工程学院及CQUPT-BUL创新学院）；Tajik National University（塔吉克斯坦国立大学）
p-type Ce1.05Fe4Sb12.04 filled skutterudites with much improved thermoelectric properties have been synthesized by rapidly converting nearly amorphous ribbons into crystalline pellets under pressure. It is found that this process greatly suppresses grain growth and second phase formation/segregation, and hence results in the samples consisting of nano-sized grains with strongly-coupled grain boundaries, as observed by transmission electron microscopy. The room temperature carrier mobility in these samples is significantly higher (nearly double) than those in the samples of the same starting co…
We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high $ZT$ at optimized doping, and suggests that the $ZT$ value can reach 0.7 at T = 1400 K. Thus $ZT$ can be improved from the current expe…
Mg-Si-Sn solid solutions have interesting and useful semiconducting properties particularly for thermoelectric applications. While cubic solid solutions have been prepared by a variety of methods, solid solutions with a trigonal crystal structure have not been reported. We employed a combination of high energy ball milling and current activated pressure assisted densification (CAPAD) to induce and complete phase transformation from cubic to trigonal phase, forming dense trigonal composites. This is the first successful preparation of the trigonal phase in Mg-Si-Sn stem. In addition, we report …
Single-crystalline silicon is well known to be a poor thermoelectric material due to its high thermal conductivity. Most excellent research has focused on ways to decrease its thermal conductivity while retaining acceptably large power factors (PFs). Less effort has been spent to enhance the PF in poly and nanocrystalline silicon, instead. Here we show that in boron-hyperdoped nanocrystalline thin films PF may be increased up to 33 mW K$^{-2}$m$^{-1}$ at 300 K when hydrogen embedded in the film during deposition is removed. The result makes nanocrystalline Si a realistic competitor of Bi$_2$Te…
We study what kind of topological crystalline insulator phase emerges from nodal line semimetal phases in the face-centered cubic system which is not indicated by topological indices when spin-orbit coupling (SOC) is introduced. We construct an effective model which hosts two different nodal lines phases, and calculated mirror Chern numbers in it by introducing SOC. As a result, we find that the two nodal line phases with different nodal line configurations are mapped to different topological crystalline insulator phases. This result shows that turning off SOC and checking the nodal line confi…
The high-throughput (HT) computational method is a useful tool to screen high performance functional materials. In this work, using the deformation potential method under the single band model, we evaluate the carrier relaxation time and establish an electrical descriptor (\c{hi}) characterized by the carrier effective masses based on the simple rigid band approximation. The descriptor (\c{hi}) can be used to reasonably represent the maximum power factor without solving the electron Boltzmann transport equation. Additionally, the Grüneisen parameter (γ), a descriptor of the lattice anharmonici…
On the basis of detailed first-principles calculations and semi-classical Boltzmann transport, the anisotropic thermoelectric transport properties of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ under strain were investigated. It was found that due to compensation effects of the strain dependent thermopower and electrical conductivity, the related powerfactor will decrease under applied in-plane strain for Bi$_2$Te$_3, while being stable for Sb$_2$Te$_3$. A clear preference for thermoelectric transport under hole-doping, as well as for the in-plane transport direction was found for both tellurides. In contra…
We report the formation of cubic phase, under ambient conditions, in thin films of Zirconia synthesized by electron beam evaporation technique. The stabilization of the cubic phase was achieved without the use of chemical stabilizers and/or concurrent ion beam bombardment. Films of two different thickness (660 nm, 140 nm) were deposited. The 660 nm and 140 nm films were found to be stoichiometric (ZrO2) and off-stoichiometric (ZrO1.7) respectively by Resonant Rutherford back-scattering spectroscopy. While the 660 nm as-deposited films were in the cubic phase, as indicated by X-ray diffraction …
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 x 10-4 ohm.cm at room temperature), one order of magnitude lower than commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectri…
For topological insulators and topological crystalline insulators (TCIs), their exotic surface states are promising for fundamental condensed matter physics research as well as future electronics such as low-dissipation electronics and spintronics. However, the high bulk carrier density that often dominates the transport property is the major materials challenge, critically hindering our ability to study and manipulate the surface states. In this manuscript, we demonstrate an alloying strategy, SnSexTe1-x, to effectively reduce the bulk carrier density. As long as SnSexTe1-x remains in the cub…
The design of uranium-based thermoelectric materials presents a novel and intriguing strategy for directly converting nuclear heat into electrical power. Using high-level first-principles approach combined with accurate solution of Boltzmann transport equation, we demonstrate that a giant n-type power factor of 13.8 mW/mK^2 and a peak ZT value of 2.2 can be realized in the heavy-fermion UN2 compound at 700 K. Such promising thermoelectric performance arises from the large degeneracy (Nv=14) of heavy conduction band coupled with weak electron-phonon interactions, which is in principle governed …
Single-crystalline whiskers of thermoelectric cobalt oxide, NaxCoO2, have been grown by an unconventional method from potassium-containing compositions, and their transport properties, and chemical compositions were determined. The growth mechanism was analyzed and interpreted by means of thermogravimetric analysis. At 300 K, electrical resistivity r and thermoelectric power S of the whisker are 102 u ohm cm and 83 uV/K, respectively. The power-factor, S2/r, thus is enhanced up to ~ 68 uW/K2 cm.
Ca$_{10}$GdCdSb$_9$ is a new Zintl phase with a large unit cell volume (~2500 Å3) and a very complex, disordered structure, which can drive the realization of ultralow thermal conductivity in this material. The measured Seebeck coefficient, $α$, for single-crystalline Ca$_{10}$GdCdSb$_9$ approaches 350 $μ$V/K at 600 K. The experimentally determined electrical resistivity of Ca$_{10}$GdCdSb$_9$ is very low, leading to a remarkably high-power factor PF of 23.2 $μ$W/cm.K$^2$ at 460 K. The extraordinary PF value in this material, higher than those of the currently known state-of-the-art materials …
We report the thermoelectric properties of polycrystalline samples of Ca3Pb1-xBixO (x = 0, 0.1, 0.2) and Ca3SnO, both crystallizing in a cubic antiperovskite-type structure. The Ca3SnO sample shows metallic resistivity and its thermoelectric power approaches 100 uV K-1 at room temperature, resulting in the thermoelectric power factor of Ca3SnO being larger than that of Ca3Pb1-xBixO. On the basis of Hall and Sommerfeld coefficients, the Ca3SnO sample is found to be a p-type metal with a carrier density of ~1019 cm-3, a mobility of ~80 cm2 V-1 s-1, both comparable to those in degenerated semicon…
Intermetallic semiconductors with the cubic Half-Heusler structure (XYZ) have excellent thermoelectric properties. This has been attributed to the high degeneracy of the carrier pockets in the band structure, but large differences are found between different material compositions. Half-Heuslers are often interpreted within Zintl chemistry, making a clear distinction between an electropositive cation ($X^{n+}$) and an extended polyanion ($YZ^{n-}$). Based on quantitative real space chemical bonding analysis, we unravel large degrees of covalent bonding between the formal cation and anion, makin…
Low thermal conductivity is favorable for preserving the temperature gradient between the two ends of a thermoelectric material in order to ensure continuous electron current generation. In high-performance thermoelectric materials, there are two main low thermal conductivity mechanisms: the phonon anharmonic in PbTe and SnSe and phonon scattering resulting from the dynamic disorder in AgCrSe2 and CuCrSe2, which have been successfully revealed by inelastic neutron scattering. Using neutron scattering and ab initio calculations, we report here a mechanism of static local structure distortion co…
Ion beam irradiation has recently emerged as a versatile approach to functional materials design. We show in this work that patterned defective regions generated by ion beam irradiation of silicon can create a phonon glass electron crystal (PGEC), a longstanding goal of thermoelectrics. By controlling the effective diameter of and spacing between the defective regions, molecular dynamics simulations suggest a reduction of the thermal conductivity by a factor of $\approx$20 is achievable. Boltzmann theory shows that the thermoelectric power factor remains largely intact in the damaged material.…
We report the electrical resistivity, thermoelectric power, and thermal conductivity of single-crystalline and sintered samples of the 5d pyrochlore oxide CsW2O6. The electrical resistivity of the single crystal is 3 mohm cm at 295 K and gradually increases with decreasing temperature above 215 K (Phase I). The thermoelectric power of the single-crystalline and sintered samples shows a constant value of approximately -60 uV K-1 in Phase I. These results reflect that the electron conduction by W 5d electrons in Phase I is incoherent and in the hopping regime, although a band gap does not open a…
Thermoelectric device is a promising next-generation energy solution owing to its capability to transform waste heat into useful electric energy, which can be realized in materials with high elec- tric conductivities and low thermal conductivities. A recently synthesized silicon allotrope of Si$_{24}$ features highly anisotropic crystal structure with nanometre-sized regular pores. Here, based on first-principles study without any empirical parameter, we show that the slightly doped Si$_{24}$ can pro- vide an order-of-magnitude enhanced thermoelectric figure of merit at room temperature, compa…
Structural heterogeneity-induced enhancement of transverse magneto-thermoelectric conversion revealed by thermoelectric imaging in functionally graded materials
National Institute for Materials Science（国立材料研究所）；National Institute of Advanced Industrial Science and Technology（国立产业技术综合研究所）；Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo（东京大学前沿科学研究生院先进材料科学系）
Explicit expressions for inverse of Young's modulus E, inverse of shear modulus G, and Poisson's ratio for cubic media are considered. All these characteristics of elastic media depend on three components of the compliance tensor S, and on direction cosines of mutually perpendicular vectors m and n with fourfold symmetry axes. These characteristics are studied for all mechanically stable cubic materials for vectors n belonging to the irreducible body angle subtended by three cubic high symmetry directions [001], [111], and [110]. Regions in the stability triangle of in which cubic elastic mate…
Highly oriented polymer films can show considerable anisotropy in the thermoelectric properties leading to power factors beyond those predicted by the widely obeyed power law linking the thermopower $S$ and the electrical conductivity $σ$ as $S\proptoσ^{-1/4}$. This has led to encouraging practical results with respect to the electrical conductivity, notwithstanding that the conditions necessary to enhance $σ$ and $S$ simultaneously are less clear. Here, kinetic Monte Carlo simulations are used to study the impact of structural anisotropy on the thermoelectric properties of disordered organic …
A finite electronic band gap is a standard filter in high-throughput screening of materials using density functional theory (DFT). However, because of the systematic underestimation of band gaps in standard DFT approximations, a number of compounds may incorrectly be predicted metallic. In a more accurate treatment, such materials may instead appear as low band gap materials and could e.g. have good thermoelectric properties if suitable doping is feasible. To explore this possibility, we performed hybrid functional calculations on 1093 cubic materials listed in the MaterialsProjects database w…
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is a…
It is thought that the proposed new family of multi-functional materials namely the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching we sho…
We report a comprehensive magneto-transport study on single crystalline p-type topological crystalline insulator (TCI) SnTe, across the cubic-to-rhombohedral (R3m) transition which occurs as a function of temperature. The electrical resistivity of a well-characterized SnTe crystal shows evidence for the cubic-to-rhombohedral structural transition at T$_s$ $\sim$64,K and a carrier density of $\sim$1.8$\times$10$^{20}$ at 77,K. As a function of applied magnetic field perpendicular to the (100) plane, SnTe exhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of 42% at 5K a…
