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arXiv 1503.05588cond-mat.mes-hall
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层间耦合和库仑相互作用对少层MoSe2纳米结构电子结构的影响

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Aaron J. Bradley, Miguel M. Ugeda, Felipe H. da Jornada, Diana Y. Qiu, Wei Ruan, Yi Zhang, Sebastian Wickenburg, Alexander Riss, Jiong Lu, Sung-Kwan Mo, Zahid H… 展开作者

Aaron J. Bradley, Miguel M. Ugeda, Felipe H. da Jornada, Diana Y. Qiu, Wei Ruan, Yi Zhang, Sebastian Wickenburg, Alexander Riss, Jiong Lu, Sung-Kwan Mo, Zahid Hussain, Zhi-Xun Shen, Steven G. Louie, Michael F. Crommie

摘要:

尽管过渡金属二硫属化物(TMD)材料中的层间力的性质较弱,但它们的性质高度依赖于在少层二维(2D)极限中的层数。在这里,我们提出了一个相结合的扫描隧道显微镜/光谱和GW的理论研究的电子结构的高品质的单层和几层MoSe 2生长在双层石墨烯。我们发现,电子(准粒子)的带隙,传输和光学现象的基本参数,减少了近一个电子伏时,从一个层到三个由于层间耦合和屏蔽效应。我们的结果描绘了一个清晰的图像的演变的电子波函数杂化的价带和导带的谷层的数目是改变的。这证明了范德华异质结构的层数和电子-电子相互作用的重要性,并有助于澄清它们的电子特性如何在未来的2D纳米器件中进行调整。

英文摘要:

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures, and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.

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