Direct surface charging and alkali-metal doping for tuning the interlayer magnetic order in planar nanostructures

Pseudo-spin canting transition in bilayer quantum Hall ferromagnets: a self-charging capacitor

For sufficiently strong in-plane magnetic field a $ν_T=1$ bilayer quantum Hall pseudo-ferromagnet is expected to exhibit a soliton lattice. For sufficiently close layers and large in-plane field, we predict this incommensurate ``planar'' phase $P_I$ to undergo a reentrant pseudo-spin canting transition to an incommensurate state $C_I$, with a finite out-of-plane pseudo-magnetization component, corresponding to an interlayer charge imbalance in regions between solitons. At $T>0$ the transition is in the 2d compressible Ising universality class, and at T=0, the quantum transition is in heretofor…

电子束诱导的层间扭角无接触操控

Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures

本研究通过电子束诱导电荷注入实现了对范德瓦尔斯异质结构层间扭角的无接触操控，利用界面电场产生静电扭矩并诱导角位移。

Bilayer SnS$_{2}$: Easy-tunable Stacking Sequence by Charging and Loading Pressure

Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS$_{2}$, which is recently synthesized monolayer metal dichalcogenide. Comparison of 1H and 1T phases of monolayer SnS$_{2}$ confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS$_{2}$ is weaker than that of typical transition-metal dichalcogenides (TMDs) so that alternative stacking orders have similar structural parameters and they are separated…

紧密间距石墨烯双层中相互作用驱动的电荷转移跃迁

Interaction driven charge transfer transitions in closely spaced graphene double layers

该研究通过隧穿谱学发现紧密间距石墨烯双层量子霍尔铁磁体的电荷转移由相互作用驱动的相变主导，揭示了层内与层间交换的不同作用，确立层间隧穿为探测相关电子系统的有力工具。

电子双层中量子电容的涨落电动力学

Fluctuation electrodynamics of quantum capacitance in electron bilayers

本文建立电子双层量子电容的涨落电动力学理论，揭示层间关联通过耦合等离激元贡献电容，且石墨烯双层的层间修正因带间屏蔽异常，可作为层间配对探针。

Microscopic mechanism of tunable band gap in potassium doped few-layer black phosphorus

Tuning band gaps in two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in design and optimization of electronic and optoelectronic devices. Here, based on the density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized at the…