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arXiv 1503.05002cond-mat.str-elcond-mat.mes-hallhep-th
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石墨烯中Dirac电子的Mott多临界性

Mott multicriticality of Dirac electrons in graphene

Laura Classen, Igor F. Herbut, Lukas Janssen, Michael M. Scherer

摘要:

我们利用Gross-Neveu-Yukawa有效理论研究了石墨烯蜂窝晶格上半金属-绝缘体相变的多临界行为,其中SO(3)(Heisenberg)序参量描述了反铁磁相变,$\mathbb{Z}_2$(Ising)序参量描述了向交错密度态的相变.它们的耦合导致了多临界行为,这决定了接近多临界点的相图结构。根据费米子口味的数量$N_f$和工作在附近的三个(空间)维度的微扰制度,我们观察到一阶或连续的相变在多临界点。对于$N_f=2$的石墨烯情况和在我们的低阶近似内,相图显示四临界结构。

英文摘要:

We study the multicritical behavior for the semimetal-insulator transitions on graphene's honeycomb lattice using the Gross-Neveu-Yukawa effective theory with two order parameters: the SO(3) (Heisenberg) order parameter describes the antiferromagnetic transition, and the $\mathbb{Z}_2$ (Ising) order parameter describes the transition to a staggered density state. Their coupling induces multicritical behavior which determines the structure of the phase diagram close to the multicritical point. Depending on the number of fermion flavors $N_f$ and working in the perturbative regime in vicinity of three (spatial) dimensions, we observe first order or continuous phase transitions at the multicritical point. For the graphene case of $N_f=2$ and within our low order approximation, the phase diagram displays a tetracritical structure.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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